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MMBFJ309LT1

Specifications

SKU: 11292602

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MMBFJ309LT1 JFET N-Channel 25v 12~30mA SOT-23 marking GU RF amplifier
Description: The MMBFJ309LT1 is a PNP Bipolar Transistor with a low noise and high gain. Features: - Low noise: 1.5 dB typ - High gain: 115 dB typ - Low saturation voltage: 0.2 V typ - Low collector-emitter saturation voltage - High DC current gain - Low collector-emitter leakage current Applications: - Audio amplifiers - Low noise amplifiers - High frequency amplifiers - Switching applications (For reference only)

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