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Specifications
SKU: 11294936
BSP78 MOSFET N-Channel 42v 3A SOT-223/SC-73/TO261-4 marking BSP78 low on-resistance/Low Gate Threshold Voltage/high impedance
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | - | 600 | V | Maximum voltage between collector and emitter with base open |
| Emitter-Collector Voltage | VEC | - | - | 600 | V | Maximum voltage between emitter and collector with base open |
| Base-Emitter Voltage (Forward) | VBE(on) | 1.8 | 2.5 | 3.0 | V | Base-emitter voltage at specified collector current and temperature |
| Base-Emitter Voltage (Reverse) | VBE(reverse) | - | - | 5.0 | V | Maximum reverse base-emitter voltage |
| Collector Current (Continuous) | IC | - | - | 10 | A | Maximum continuous collector current |
| Collector Current (Pulse) | IC(pulse) | - | - | 50 | A | Maximum pulse collector current (tp ≤ 10 ms, duty cycle ≤ 1%) |
| Power Dissipation | PTOT | - | - | 150 | W | Maximum total power dissipation (TA = 25°C) |
| Junction Temperature | TJ | - | - | 175 | °C | Maximum junction temperature |
| Storage Temperature Range | TSTG | -40 | - | 150 | °C | Operating and storage temperature range |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use recommended mounting torque for screws to avoid damage.
Biasing:
- Apply base current (IB) to ensure the transistor is fully saturated when in the on state.
- Ensure VBE does not exceed the maximum forward or reverse voltage ratings.
Current Handling:
- Do not exceed the maximum continuous or pulse collector current ratings.
- For pulse applications, ensure the pulse duration and duty cycle are within specified limits.
Thermal Management:
- Monitor the junction temperature to prevent overheating.
- Use thermal paste or thermal interface materials to enhance heat transfer from the transistor to the heat sink.
Storage:
- Store in a dry environment within the specified temperature range to avoid damage.
- Handle with care to prevent mechanical stress or damage to the leads.
Electrostatic Discharge (ESD) Protection:
- Use appropriate ESD protection measures during handling and assembly to prevent damage to the device.
Testing:
- Perform initial testing under controlled conditions to verify the device parameters and performance.
- Regularly inspect and test the device to ensure continued reliability and performance.
Inquiry - BSP78
