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Specifications
SKU: 11295180
FDS6990A Complex FET 30V 7.5A SO8 marking FDS6990A high-speed switch
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -55 | - | 55 | V | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | |
| Continuous Drain Current | ID | - | - | 12 | A | @ TC = 25°C |
| Pulse Drain Current | ID(p) | - | - | 34 | A | @ TC = 25°C, tp = 10 μs, duty cycle = 1% |
| Power Dissipation | PTOT | - | - | 27 | W | @ TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature | TSTG | -65 | - | 150 | °C | |
| Thermal Resistance | RθJC | - | 1.5 | - | °C/W |
Instructions for Use:
Handling Precautions:
- Handle the FDS6990A with care to avoid static damage. Use proper ESD protection.
- Do not exceed the maximum ratings specified in the table to prevent device failure.
Mounting:
- Ensure good thermal management by using appropriate heat sinks or cooling solutions.
- Follow recommended PCB layout guidelines to minimize parasitic inductance and resistance.
Biasing:
- Apply gate-source voltage (VGS) within the specified range to ensure reliable operation.
- For optimal performance, use a gate resistor to control the rise and fall times of the gate voltage.
Operation:
- Monitor the drain current (ID) and power dissipation (PTOT) to ensure they remain within safe limits.
- Regularly check the junction temperature (TJ) to prevent overheating.
Storage:
- Store the FDS6990A in a dry, cool environment within the specified storage temperature range.
Testing:
- Perform initial testing at room temperature to verify functionality before deploying in high-stress environments.
- Use appropriate test equipment and procedures to avoid damaging the device during testing.
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