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2SC3233

Specifications

SKU: 11297049

BUY 2SC3233 https://www.utsource.net/itm/p/11297049.html
2SC3233 NPN 500V 2A TO252 MARKING C3233
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - - 100 V
Collector-Base Voltage VCB - - 100 V
Emitter-Base Voltage VEB -5 - 5 V
Collector Current IC - 15 20 A
Base Current IB - 1.5 2 A
Power Dissipation PT - 150 150 W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings to prevent damage.
    • Use appropriate heat sinks to manage power dissipation and maintain junction temperature within safe limits.
  2. Mounting:

    • Ensure proper mechanical mounting to avoid thermal issues.
    • Use thermal paste between the transistor and heat sink for better heat transfer.
  3. Biasing:

    • Ensure the base current (IB) is sufficient to drive the collector current (IC) without exceeding the maximum base current.
    • Use a suitable biasing circuit to stabilize the operating point.
  4. Testing:

    • Test the transistor under controlled conditions to ensure it meets the required specifications.
    • Use a multimeter or transistor tester to check for continuity and proper functioning.
  5. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
  6. Application:

    • Suitable for high-power amplification and switching applications.
    • Ensure the application does not exceed the maximum voltage and current ratings.
(For reference only)

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