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TGAN80N60F2DS

Specifications

SKU: 11301250

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Description: The TGAN80N60F2DS is a N-channel MOSFET transistor manufactured by Trinno. It has a maximum drain-source voltage of 600V and a maximum drain current of 80A. Features: Low on-resistance Low gate charge Low input capacitance High current handling capability High-speed switching High avalanche energy capability Applications: Power supplies Motor control Switching applications Battery management systems DC-DC converters Solar inverters (For reference only)

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