Specifications
SKU: 11301271
Parameter | Symbol | Min | Typical | Max | Unit | Notes |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 40 | V | |
Emitter-Base Voltage | VEB | - | - | 6 | V | |
Collector-Base Voltage | VCB | - | - | 30 | V | |
Collector Current | IC | - | - | 0.8 | A | |
Base Current | IB | - | - | 0.1 | A | |
Power Dissipation | PT | - | - | 0.65 | W | |
Forward Current Transfer Ratio | hFE | 10 | 75 | 300 | - | |
Transition Frequency | fT | - | 300 | - | MHz | |
Storage Temperature Range | TSTG | -65 | - | 150 | °C | |
Operating Temperature Range | TA | -65 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking if the transistor is to be operated near its maximum power dissipation.
- Avoid mechanical stress on the leads, as this can affect performance.
Biasing:
- The base-emitter junction should be forward-biased to allow current flow from the collector to the emitter.
- Use appropriate biasing circuits to ensure stable operation and prevent thermal runaway.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table to avoid damage to the device.
- Operate within the recommended temperature range to ensure reliable performance.
Storage:
- Store in a dry environment to prevent moisture damage.
- Handle with care to avoid static discharge, which can damage the transistor.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the 2N2219A.
- Test the hFE (current gain) to ensure it falls within the specified range.
Applications:
- Suitable for general-purpose amplification and switching applications.
- Commonly used in audio amplifiers, power supplies, and control circuits.
Inquiry - 2N2219A