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2N2219A

Specifications

SKU: 11301271

BUY 2N2219A https://www.utsource.net/itm/p/11301271.html

Parameter Symbol Min Typical Max Unit Notes
Collector-Emitter Voltage VCE - - 40 V
Emitter-Base Voltage VEB - - 6 V
Collector-Base Voltage VCB - - 30 V
Collector Current IC - - 0.8 A
Base Current IB - - 0.1 A
Power Dissipation PT - - 0.65 W
Forward Current Transfer Ratio hFE 10 75 300 -
Transition Frequency fT - 300 - MHz
Storage Temperature Range TSTG -65 - 150 °C
Operating Temperature Range TA -65 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking if the transistor is to be operated near its maximum power dissipation.
    • Avoid mechanical stress on the leads, as this can affect performance.
  2. Biasing:

    • The base-emitter junction should be forward-biased to allow current flow from the collector to the emitter.
    • Use appropriate biasing circuits to ensure stable operation and prevent thermal runaway.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table to avoid damage to the device.
    • Operate within the recommended temperature range to ensure reliable performance.
  4. Storage:

    • Store in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the transistor.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2N2219A.
    • Test the hFE (current gain) to ensure it falls within the specified range.
  6. Applications:

    • Suitable for general-purpose amplification and switching applications.
    • Commonly used in audio amplifiers, power supplies, and control circuits.
(For reference only)

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