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Specifications
SKU: 11301273
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 500 | V | Maximum voltage between collector and emitter with the base open |
| Emitter-Collector Voltage | VECC | - | - | 500 | V | Maximum voltage between emitter and collector with the base open |
| Collector-Base Voltage | VCBO | - | - | 500 | V | Maximum voltage between collector and base with the emitter open |
| Base-Emitter Voltage | VBE | - | - | 5.0 | V | Maximum voltage between base and emitter |
| Continuous Collector Current | IC | - | 15 | - | A | Maximum continuous current through the collector |
| Continuous Emitter Current | IE | - | 15 | - | A | Maximum continuous current through the emitter |
| Power Dissipation | PT | - | - | 200 | W | Maximum power dissipation at TA = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | Maximum junction temperature |
| Storage Temperature | TSTG | -55 | - | 150 | °C | Operating temperature range for storage |
| Thermal Resistance, Junction to Case | RθJC | - | 0.6 | - | °C/W | Thermal resistance from the junction to the case |
| Transition Frequency | fT | - | 3.0 | - | MHz | Frequency at which the current gain drops to unity |
| Saturation Voltage | VCE(sat) | - | 1.8 | 2.5 | V | Collector-emitter saturation voltage at IC = 15A, IB = 1.5A |
| Storage Time | tstg | - | 200 | - | ns | Time required for the transistor to turn off completely |
Instructions for Use:
Handling:
- Handle the MTM15N50 with care to avoid mechanical damage.
- Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Mounting:
- Ensure good thermal contact between the transistor and the heat sink.
- Use a suitable thermal compound to enhance heat transfer.
- Torque the mounting screws to the recommended specifications to avoid over-tightening.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure that the junction temperature does not exceed 150°C.
- Operate within the specified storage temperature range to avoid damage.
Circuit Design:
- Use appropriate decoupling capacitors to stabilize the power supply.
- Ensure adequate base drive to achieve the desired current gain and switching performance.
- Consider the transition frequency when designing high-frequency circuits.
Testing:
- Test the device under controlled conditions to verify its performance.
- Use a suitable test setup to measure parameters such as VCE(sat) and IC.
Storage:
- Store the device in a dry, cool place away from direct sunlight.
- Follow the recommended storage temperature range to ensure long-term reliability.
Inquiry - MTM15N50
