Specifications
SKU: 11301571
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 60 | - | V |
Gate-Source Voltage | VGS | -16 | - | 16 | V |
Continuous Drain Current | ID | - | 1.5 | - | A |
Pulse Drain Current | IDpeak | - | 4.5 | - | A |
Power Dissipation | PD | - | 1.8 | - | W |
Junction Temperature | TJ | -55 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Thermal Resistance | RθJC | - | 60 | - | °C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use recommended PCB layout and mounting techniques to ensure optimal thermal performance.
Biasing:
- Apply gate-source voltage (VGS) within the specified range to avoid damage.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
Current Handling:
- Do not exceed the continuous drain current (ID) or pulse drain current (IDpeak) ratings.
- For high current applications, consider derating the current based on ambient temperature and thermal conditions.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it remains within the operating range.
- Use appropriate cooling methods such as heatsinks or forced air cooling if necessary.
Storage:
- Store the device in a dry, cool environment within the specified storage temperature range (TSTG).
- Avoid exposure to extreme temperatures and humidity to prevent damage.
Handling:
- Handle with care to avoid mechanical stress or damage.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Testing:
- Use appropriate test equipment and procedures to verify the device parameters.
- Refer to the datasheet for specific test conditions and methods.
Inquiry - SI2315BDS-T1-E3