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IPW60R125P6,6R125P6,

Specifications

SKU: 11301574

BUY IPW60R125P6,6R125P6, https://www.utsource.net/itm/p/11301574.html

Parameter Symbol Min Typ Max Unit
On-State Resistance RDS(on) - 60 -
Continuous Drain Current ID - 125 - A
Pulse Drain Current IGM - 375 - A
Gate-Source Voltage VGS(th) 2.0 4.0 6.0 V
Maximum Gate-Source Voltage VGS(max) - - ±20 V
Maximum Drain-Source Voltage VDS(max) - - 600 V
Power Dissipation PD - - 160 W
Junction Temperature TJ -25 - 175 °C
Storage Temperature TSTG -55 - 175 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid mechanical damage.
    • Avoid exposing the device to excessive static electricity (ESD).
  2. Mounting:

    • Ensure proper thermal management by using appropriate heat sinks or cooling solutions.
    • Follow the recommended PCB layout guidelines to minimize parasitic inductance and resistance.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to ensure reliable operation.
    • Use a gate resistor to limit the current and reduce ringing.
  4. Thermal Considerations:

    • Monitor the junction temperature (TJ) to prevent overheating.
    • Ensure adequate ventilation and cooling, especially during high-power operations.
  5. Electrical Testing:

    • Perform electrical tests within the specified limits to avoid damage.
    • Use appropriate test equipment and procedures to ensure accurate measurements.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight.
    • Follow the storage temperature range to prevent degradation.
  7. Environmental Considerations:

    • Dispose of the device according to local environmental regulations.
    • Use the device in applications that comply with relevant safety and environmental standards.
(For reference only)

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