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IRG4BC40UPBF

Specifications

SKU: 11301720

BUY IRG4BC40UPBF https://www.utsource.net/itm/p/11301720.html

Parameter Symbol Min Typ Max Unit Description
Absolute Maximum Ratings (TA = 25°C) - - - - - -
Drain-Source Voltage VDSS - - 400 V Continuous
Gate-Source Voltage VGS -20 - 20 V Continuous
Continuous Drain Current ID - - 8.3 A TC = 25°C, Pulse Width ≤ 10 μs
Power Dissipation PD - - 160 W TC = 25°C
Junction Temperature TJ -55 - 175 °C -
Storage Temperature Range TSTG -65 - 150 °C -
Thermal Resistance, Junction to Case RθJC - 1.2 - °C/W -
Electrical Characteristics (TA = 25°C) - - - - - -
Input Capacitance Ciss - 1650 - pF VDS = 25V, f = 1 MHz
Output Capacitance Coss - 350 - pF VDS = 25V, f = 1 MHz
Reverse Transfer Capacitance Crss - 300 - pF VDS = 25V, f = 1 MHz
Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 V ID = 1 mA, TA = 25°C
On-State Resistance RDS(on) - 0.55 - Ω VGS = 10V, ID = 8.3A, TA = 25°C
Turn-On Delay Time t(on,delay) - 55 - ns VGS = 10V, ID = 8.3A, RL = 10Ω
Rise Time t(rise) - 25 - ns VGS = 10V, ID = 8.3A, RL = 10Ω
Turn-Off Delay Time t(off,delay) - 40 - ns VGS = 10V, ID = 8.3A, RL = 10Ω
Fall Time t(fall) - 15 - ns VGS = 10V, ID = 8.3A, RL = 10Ω

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid static discharge which can damage the component.
  2. Mounting:

    • Ensure proper heat sinking to manage power dissipation and maintain junction temperature within safe limits.
    • Use recommended mounting torque for screws to avoid mechanical stress.
  3. Operating Conditions:

    • Do not exceed the absolute maximum ratings at any time.
    • Ensure that the gate-source voltage (VGS) is within the specified range to prevent gate damage.
    • Keep the drain-source voltage (VDS) below the rated value to avoid breakdown.
  4. Circuit Design:

    • Use appropriate gate drive circuits to ensure reliable switching.
    • Consider the on-state resistance (RDS(on)) in your power calculations to minimize power loss.
    • Account for the switching times (t(on,delay), t(rise), t(off,delay), t(fall)) to optimize circuit performance.
  5. Testing:

    • Use a suitable test setup to measure parameters like input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).
    • Verify the gate threshold voltage (VGS(th)) and on-state resistance (RDS(on)) under the specified conditions.
  6. Safety:

    • Always follow safety guidelines when handling high-voltage and high-power components.
    • Use appropriate protective equipment and grounding techniques to prevent electrical hazards.
(For reference only)

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