Specifications
SKU: 11301720
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Absolute Maximum Ratings (TA = 25°C) | - | - | - | - | - | - |
Drain-Source Voltage | VDSS | - | - | 400 | V | Continuous |
Gate-Source Voltage | VGS | -20 | - | 20 | V | Continuous |
Continuous Drain Current | ID | - | - | 8.3 | A | TC = 25°C, Pulse Width ≤ 10 μs |
Power Dissipation | PD | - | - | 160 | W | TC = 25°C |
Junction Temperature | TJ | -55 | - | 175 | °C | - |
Storage Temperature Range | TSTG | -65 | - | 150 | °C | - |
Thermal Resistance, Junction to Case | RθJC | - | 1.2 | - | °C/W | - |
Electrical Characteristics (TA = 25°C) | - | - | - | - | - | - |
Input Capacitance | Ciss | - | 1650 | - | pF | VDS = 25V, f = 1 MHz |
Output Capacitance | Coss | - | 350 | - | pF | VDS = 25V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 300 | - | pF | VDS = 25V, f = 1 MHz |
Gate Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 1 mA, TA = 25°C |
On-State Resistance | RDS(on) | - | 0.55 | - | Ω | VGS = 10V, ID = 8.3A, TA = 25°C |
Turn-On Delay Time | t(on,delay) | - | 55 | - | ns | VGS = 10V, ID = 8.3A, RL = 10Ω |
Rise Time | t(rise) | - | 25 | - | ns | VGS = 10V, ID = 8.3A, RL = 10Ω |
Turn-Off Delay Time | t(off,delay) | - | 40 | - | ns | VGS = 10V, ID = 8.3A, RL = 10Ω |
Fall Time | t(fall) | - | 15 | - | ns | VGS = 10V, ID = 8.3A, RL = 10Ω |
Instructions for Use:
Handling and Storage:
- Store in a dry, cool place away from direct sunlight.
- Handle with care to avoid static discharge which can damage the component.
Mounting:
- Ensure proper heat sinking to manage power dissipation and maintain junction temperature within safe limits.
- Use recommended mounting torque for screws to avoid mechanical stress.
Operating Conditions:
- Do not exceed the absolute maximum ratings at any time.
- Ensure that the gate-source voltage (VGS) is within the specified range to prevent gate damage.
- Keep the drain-source voltage (VDS) below the rated value to avoid breakdown.
Circuit Design:
- Use appropriate gate drive circuits to ensure reliable switching.
- Consider the on-state resistance (RDS(on)) in your power calculations to minimize power loss.
- Account for the switching times (t(on,delay), t(rise), t(off,delay), t(fall)) to optimize circuit performance.
Testing:
- Use a suitable test setup to measure parameters like input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).
- Verify the gate threshold voltage (VGS(th)) and on-state resistance (RDS(on)) under the specified conditions.
Safety:
- Always follow safety guidelines when handling high-voltage and high-power components.
- Use appropriate protective equipment and grounding techniques to prevent electrical hazards.
Inquiry - IRG4BC40UPBF