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Specifications
SKU: 11301812
| Parameter | MJE15032G (NPN) | MJE15033G (PNP) |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 V | 40 V |
| Emitter-Base Voltage (VEBO) | 5 V | 5 V |
| Collector-Base Voltage (VCBO) | 40 V | 40 V |
| Collector Current (IC) | 3 A | 3 A |
| Power Dissipation (PT) | 65 W | 65 W |
| Storage Temperature Range (TSTG) | -65°C to +150°C | -65°C to +150°C |
| Operating Temperature Range (TA) | -55°C to +150°C | -55°C to +150°C |
| DC Current Gain (hFE) | 20 to 200 | 20 to 200 |
| Transition Frequency (fT) | 1 MHz | 1 MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.2 V at IC = 3 A, IB = 0.3 A | 1.2 V at IC = 3 A, IB = 0.3 A |
| Base-Emitter Saturation Voltage (VBE(sat)) | 1.8 V at IC = 3 A, IB = 0.3 A | 1.8 V at IC = 3 A, IB = 0.3 A |
| Thermal Resistance, Junction to Case (RθJC) | 1.5°C/W | 1.5°C/W |
| Package Type | TO-220 | TO-220 |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
Biasing:
- For NPN (MJE15032G), apply a positive voltage to the base relative to the emitter to turn the transistor on.
- For PNP (MJE15033G), apply a negative voltage to the base relative to the emitter to turn the transistor on.
Current Limiting:
- Use appropriate base resistors to limit the base current and prevent damage to the transistor.
- Ensure that the collector current does not exceed the maximum rating of 3 A.
Voltage Handling:
- Do not exceed the maximum collector-emitter voltage (VCEO) of 40 V.
- Keep the emitter-base voltage (VEBO) within the 5 V limit.
Thermal Management:
- Monitor the operating temperature to ensure it stays within the -55°C to +150°C range.
- Use a heatsink with sufficient surface area and thermal conductivity to dissipate the power.
Storage:
- Store the transistors in a dry, cool place to avoid moisture and temperature-related damage.
- Handle with care to avoid mechanical stress or static discharge.
Testing:
- Before using the transistors in a circuit, test them to ensure they meet the specified parameters.
- Use a multimeter or a transistor tester to check the hFE, VCE(sat), and VBE(sat) values.
By following these guidelines, you can ensure reliable operation and longevity of the MJE15032G and MJE15033G transistors in your applications.
(For reference only)Inquiry - MJE15032G MJE15033G
