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F13NK50Z

Specifications

SKU: 11301813

BUY F13NK50Z https://www.utsource.net/itm/p/11301813.html

Parameter Symbol Min Typ Max Unit Description
Breakdown Voltage V(BR)DSS - 500 - V Drain-to-Source Breakdown Voltage
Continuous Drain Current ID - 13 - A Continuous Drain Current (Tc = 25°C)
Pulse Drain Current Ipp - 80 - A Pulse Drain Current (t = 10 ms, Tc = 25°C)
Gate Threshold Voltage VGS(th) 2.0 4.0 6.0 V Gate Threshold Voltage
On-State Resistance RDS(on) - 1.2 - Ω On-State Resistance (VGS = 10V, ID = 13A)
Total Power Dissipation Ptot - 150 - W Total Power Dissipation (Tc = 25°C)
Junction Temperature Tj - - 175 °C Maximum Junction Temperature
Storage Temperature Tstg -55 - 150 °C Operating and Storage Temperature Range

Instructions for Use:

  1. Handling Precautions:

    • Handle the F13NK50Z with care to avoid damage to the leads and body.
    • Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.
  2. Mounting and Soldering:

    • Ensure that the mounting surface is clean and free of contaminants.
    • Use a soldering iron with a temperature no higher than 300°C.
    • Avoid excessive heat and prolonged soldering times to prevent thermal damage.
    • Allow the device to cool naturally after soldering.
  3. Operating Conditions:

    • Ensure that the operating conditions do not exceed the maximum ratings specified in the table.
    • Maintain the junction temperature within the specified range to ensure reliable operation.
    • Use appropriate heat sinks or cooling methods if the power dissipation is high.
  4. Testing:

    • Test the device under controlled conditions to verify its performance.
    • Use a suitable test circuit to measure parameters such as V(BR)DSS, RDS(on), and VGS(th).
  5. Storage:

    • Store the F13NK50Z in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the device in its original packaging until ready for use to protect it from moisture and physical damage.
  6. Application Notes:

    • Refer to the datasheet and application notes for detailed information on specific applications and circuit design considerations.
    • For high-frequency applications, consider the parasitic capacitances and inductances that can affect performance.
(For reference only)

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