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2SA1939

Specifications

SKU: 11303387

BUY 2SA1939 https://www.utsource.net/itm/p/11303387.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 80 V
Collector-Base Voltage VCBO - - 100 V
Emitter-Base Voltage VEBO - - 6 V
Collector Current IC - - 1500 mA
Base Current IB - - 150 mA
Power Dissipation PT - - 625 mW
Operating Temperature TOP -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Transition Frequency fT - 150 - MHz

Instructions for Use:

  1. Handling:

    • Handle the 2SA1939 with care to avoid mechanical damage.
    • Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.
  2. Mounting:

    • Ensure the transistor is mounted securely to the PCB (Printed Circuit Board) to prevent mechanical stress.
    • Use appropriate soldering techniques to ensure good electrical connections without overheating the device.
  3. Biasing:

    • Properly bias the base-emitter junction to ensure the transistor operates within its safe operating area (SOA).
    • Avoid exceeding the maximum base current (IB) to prevent damage.
  4. Heat Dissipation:

    • If the transistor will be operating near its maximum power dissipation (PT), consider using a heatsink to improve thermal management.
    • Ensure adequate ventilation or cooling to maintain the operating temperature within the specified range.
  5. Testing:

    • Test the transistor in a controlled environment to verify its performance before integrating it into the final application.
    • Use a multimeter or other suitable test equipment to check the continuity and voltage levels at the pins.
  6. Storage:

    • Store the 2SA1939 in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the devices in their original packaging until ready for use to protect them from moisture and static discharge.
(For reference only)

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