Specifications
SKU: 11303387
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 80 | V |
Collector-Base Voltage | VCBO | - | - | 100 | V |
Emitter-Base Voltage | VEBO | - | - | 6 | V |
Collector Current | IC | - | - | 1500 | mA |
Base Current | IB | - | - | 150 | mA |
Power Dissipation | PT | - | - | 625 | mW |
Operating Temperature | TOP | -55 | - | 150 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Transition Frequency | fT | - | 150 | - | MHz |
Instructions for Use:
Handling:
- Handle the 2SA1939 with care to avoid mechanical damage.
- Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.
Mounting:
- Ensure the transistor is mounted securely to the PCB (Printed Circuit Board) to prevent mechanical stress.
- Use appropriate soldering techniques to ensure good electrical connections without overheating the device.
Biasing:
- Properly bias the base-emitter junction to ensure the transistor operates within its safe operating area (SOA).
- Avoid exceeding the maximum base current (IB) to prevent damage.
Heat Dissipation:
- If the transistor will be operating near its maximum power dissipation (PT), consider using a heatsink to improve thermal management.
- Ensure adequate ventilation or cooling to maintain the operating temperature within the specified range.
Testing:
- Test the transistor in a controlled environment to verify its performance before integrating it into the final application.
- Use a multimeter or other suitable test equipment to check the continuity and voltage levels at the pins.
Storage:
- Store the 2SA1939 in a dry, cool place away from direct sunlight and sources of heat.
- Keep the devices in their original packaging until ready for use to protect them from moisture and static discharge.
Inquiry - 2SA1939