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2SC5171

Specifications

SKU: 11303394

BUY 2SC5171 https://www.utsource.net/itm/p/11303394.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCEO - - 80 V IC = 150 mA
Collector-Base Voltage VCBO - - 80 V IC = 0 mA
Emitter-Base Voltage VEBO - - 5 V IE = 5 mA
Collector Current IC - - 150 mA VCE = 30 V
Base Current IB - - 15 mA VCE = 30 V, IC = 150 mA
DC Current Gain hFE 40 100 300 - IC = 150 mA, VCE = 10 V
Transition Frequency fT - 300 500 MHz IC = 150 mA, VCE = 10 V
Storage Temperature Range TSTG -55 - 150 °C -
Operating Temperature Range TA -55 - 150 °C -

Instructions for Use:

  1. Mounting:

    • Ensure that the transistor is mounted on a suitable heatsink if continuous high power dissipation is expected.
    • Use thermal compound to enhance heat transfer between the transistor and the heatsink.
  2. Biasing:

    • The base current (IB) should be set to ensure reliable operation within the specified range of hFE.
    • Avoid exceeding the maximum base current to prevent damage to the transistor.
  3. Power Dissipation:

    • Calculate the power dissipation (PD) using the formula PD = VCE × IC.
    • Ensure that the power dissipation does not exceed the maximum allowable value for the given operating conditions.
  4. Storage and Handling:

    • Store the transistor in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical damage or static discharge.
  5. Testing:

    • When testing the transistor, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury to personnel.
  6. Soldering:

    • Use a soldering iron with a temperature no higher than 300°C.
    • Solder the leads quickly to avoid overheating the transistor.
  7. Circuit Design:

    • Ensure that the circuit design takes into account the maximum ratings and operating conditions to prevent premature failure of the transistor.
  8. Environmental Considerations:

    • The transistor should be used in environments where the operating temperature range is within the specified limits.
    • Avoid exposure to corrosive gases or liquids that could damage the transistor.
(For reference only)

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