Specifications
SKU: 11526455
Parameter | Value | Unit |
---|---|---|
Part Number | FGH60N60SMD | |
Package Type | TO-247 | |
Type | MOSFET | |
Polarity | N-Channel | |
Maximum Drain-Source Voltage (Vds) | 600 | V |
Maximum Gate-Source Voltage (Vgs) | ±20 | V |
Maximum Continuous Drain Current (Id) | 60 | A |
Maximum Pulse Drain Current (Ipm) | 180 | A |
Rds(on) at Vgs = 10V | 0.045 | Ω |
Power Dissipation (Ptot) | 320 | W |
Junction Temperature (Tj) | -55 to +175 | °C |
Storage Temperature (Tstg) | -65 to +150 | °C |
Thermal Resistance, Junction to Case (RthJC) | 0.4 | °C/W |
Thermal Resistance, Junction to Ambient (RthJA) | 40 | °C/W |
Instructions for Use
Handling Precautions:
- ESD Protection: Handle the MOSFET with ESD-protected equipment to avoid damage from static electricity.
- Heat Sinking: Ensure proper heat sinking to maintain the junction temperature within safe limits.
Mounting:
- Torque Specification: Apply the recommended torque to the mounting screws to ensure good thermal contact without damaging the device.
- Alignment: Ensure the MOSFET is properly aligned with the heat sink and mounting surface to prevent mechanical stress.
Electrical Connections:
- Drain (D): Connect to the high-voltage side of the circuit.
- Source (S): Connect to the low-voltage side or ground.
- Gate (G): Apply the control signal to turn the MOSFET on or off. Ensure the gate voltage is within the specified range to avoid damage.
Operating Conditions:
- Continuous Operation: Ensure the drain current does not exceed the maximum continuous drain current rating.
- Pulse Operation: For pulse applications, ensure the pulse drain current does not exceed the maximum pulse drain current rating and that the pulse width and frequency are within safe limits.
- Temperature Management: Monitor the junction temperature to ensure it remains within the specified operating range. Use appropriate cooling methods if necessary.
Testing:
- Initial Testing: Perform initial testing under controlled conditions to verify the correct operation of the MOSFET.
- Periodic Testing: Conduct periodic testing to ensure the device continues to meet performance specifications over time.
Storage:
- Dry Storage: Store the MOSFET in a dry, cool place to prevent moisture damage.
- ESD Protection: Store the MOSFET in ESD-protective packaging to prevent damage from static electricity.
Disposal:
- Recycling: Dispose of the MOSFET according to local regulations for electronic waste. Consider recycling options to minimize environmental impact.
Inquiry - FGH60N60SMD 60N60 TO-247 ORIGINAL STOCK