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FGH60N60SMD 60N60 TO-247 ORIGINAL STOCK

Specifications

SKU: 11526455

BUY FGH60N60SMD 60N60 TO-247 ORIGINAL STOCK https://www.utsource.net/itm/p/11526455.html

Parameter Value Unit
Part Number FGH60N60SMD
Package Type TO-247
Type MOSFET
Polarity N-Channel
Maximum Drain-Source Voltage (Vds) 600 V
Maximum Gate-Source Voltage (Vgs) ±20 V
Maximum Continuous Drain Current (Id) 60 A
Maximum Pulse Drain Current (Ipm) 180 A
Rds(on) at Vgs = 10V 0.045 Ω
Power Dissipation (Ptot) 320 W
Junction Temperature (Tj) -55 to +175 °C
Storage Temperature (Tstg) -65 to +150 °C
Thermal Resistance, Junction to Case (RthJC) 0.4 °C/W
Thermal Resistance, Junction to Ambient (RthJA) 40 °C/W

Instructions for Use

  1. Handling Precautions:

    • ESD Protection: Handle the MOSFET with ESD-protected equipment to avoid damage from static electricity.
    • Heat Sinking: Ensure proper heat sinking to maintain the junction temperature within safe limits.
  2. Mounting:

    • Torque Specification: Apply the recommended torque to the mounting screws to ensure good thermal contact without damaging the device.
    • Alignment: Ensure the MOSFET is properly aligned with the heat sink and mounting surface to prevent mechanical stress.
  3. Electrical Connections:

    • Drain (D): Connect to the high-voltage side of the circuit.
    • Source (S): Connect to the low-voltage side or ground.
    • Gate (G): Apply the control signal to turn the MOSFET on or off. Ensure the gate voltage is within the specified range to avoid damage.
  4. Operating Conditions:

    • Continuous Operation: Ensure the drain current does not exceed the maximum continuous drain current rating.
    • Pulse Operation: For pulse applications, ensure the pulse drain current does not exceed the maximum pulse drain current rating and that the pulse width and frequency are within safe limits.
    • Temperature Management: Monitor the junction temperature to ensure it remains within the specified operating range. Use appropriate cooling methods if necessary.
  5. Testing:

    • Initial Testing: Perform initial testing under controlled conditions to verify the correct operation of the MOSFET.
    • Periodic Testing: Conduct periodic testing to ensure the device continues to meet performance specifications over time.
  6. Storage:

    • Dry Storage: Store the MOSFET in a dry, cool place to prevent moisture damage.
    • ESD Protection: Store the MOSFET in ESD-protective packaging to prevent damage from static electricity.
  7. Disposal:

    • Recycling: Dispose of the MOSFET according to local regulations for electronic waste. Consider recycling options to minimize environmental impact.
(For reference only)

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