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Specifications
SKU: 11530755
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 100 | - | V |
| Gate-Source Voltage | VGS | -20 | - | 0 | V |
| Continuous Drain Current (TC = 25°C) | ID | - | 9 | - | A |
| Continuous Drain Current (TC = 75°C) | ID | - | 6 | - | A |
| Pulse Drain Current (TC = 25°C, t = 10 ms, Duty Cycle = 1%) | ID(p) | - | 24 | - | A |
| Total Power Dissipation (TC = 25°C) | PTOT | - | 80 | - | W |
| Junction Temperature | TJ | - | - | 150 | °C |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C |
| Gate Charge | QG | - | 14 | - | nC |
| Input Capacitance | Ciss | - | 1400 | - | pF |
| Output Capacitance | Coss | - | 110 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 220 | - | pF |
| Drain-Source On-State Resistance (VGS = -10V, ID = -4A) | RDS(on) | - | 0.5 | - | Ω |
| Turn-On Delay Time | td(on) | - | 20 | - | ns |
| Rise Time | tr | - | 45 | - | ns |
| Turn-Off Delay Time | td(off) | - | 20 | - | ns |
| Fall Time | tf | - | 45 | - | ns |
Instructions for Use:
Handling Precautions:
- The IRF9530N is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
- Avoid exceeding the maximum ratings specified in the table to prevent damage.
Mounting:
- Ensure good thermal management by using a heatsink if operating at high currents or power levels.
- Use a thermal compound between the device and the heatsink to improve heat dissipation.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
- For optimal performance, keep VGS around -10V to minimize on-state resistance (RDS(on)).
Pulse Operation:
- When operating in pulse mode, ensure that the pulse duration and duty cycle do not exceed the limits specified for pulse drain current (ID(p)).
Storage:
- Store the device in a dry, cool place within the temperature range specified in the storage temperature range (TSTG).
Testing:
- Use appropriate test equipment and methods to verify the parameters of the device. Ensure that the test conditions match the specified conditions in the parameter table.
Circuit Design:
- Design the circuit to handle the maximum power dissipation (PTOT) and ensure adequate cooling to maintain the junction temperature (TJ) below the maximum limit.
By following these instructions, you can ensure reliable and efficient operation of the IRF9530N MOSFET.
(For reference only)Inquiry - IRF9530N IRF9530 NEW ORIGINAL
