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Specifications
SKU: 11531043
| Parameter | 2SA1987 (PNP) | 2SC5359 (NPN) |
|---|---|---|
| Type | PNP Bipolar Transistor | NPN Bipolar Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V | 60 V |
| Emitter-Base Voltage (Veb) | 5 V | 5 V |
| Collector Current (Ic) | 3 A | 3 A |
| Power Dissipation (Ptot) | 65 W | 65 W |
| DC Current Gain (hFE) | 20 - 100 | 20 - 100 |
| Transition Frequency (ft) | 10 MHz | 10 MHz |
| Storage Temperature (Tstg) | -55°C to +150°C | -55°C to +150°C |
| Operating Temperature (Toper) | -55°C to +150°C | -55°C to +150°C |
| Package Type | TO-3P | TO-3P |
Instructions for Use
2SA1987 (PNP)
Mounting:
- Ensure the transistor is mounted on a heatsink if operating near its maximum power dissipation.
- Use a thermal compound to improve heat transfer between the transistor and the heatsink.
Biasing:
- Apply a negative bias to the base relative to the emitter to turn the transistor on.
- The base-emitter voltage (Vbe) should typically be around -0.7V for proper operation.
Protection:
- Use a base resistor to limit the base current and prevent damage to the transistor.
- Consider adding a flyback diode across inductive loads to protect against voltage spikes.
Storage:
- Store in a dry, cool place away from direct sunlight and moisture.
2SC5359 (NPN)
Mounting:
- Similar to the 2SA1987, ensure the transistor is mounted on a heatsink if operating near its maximum power dissipation.
- Use a thermal compound to improve heat transfer between the transistor and the heatsink.
Biasing:
- Apply a positive bias to the base relative to the emitter to turn the transistor on.
- The base-emitter voltage (Vbe) should typically be around 0.7V for proper operation.
Protection:
- Use a base resistor to limit the base current and prevent damage to the transistor.
- Consider adding a flyback diode across inductive loads to protect against voltage spikes.
Storage:
- Store in a dry, cool place away from direct sunlight and moisture.
Inquiry - 2SA1987，2SC5359
