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Specifications
SKU: 11531348
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 55 | V | - |
| Gate-Source Voltage | VGS | -15 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 38 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 29 | - | A | TC = 100°C |
| Pulse Drain Current | ID(pulse) | - | 114 | - | A | tp = 10 μs, IG = 6 A, TC = 25°C |
| Power Dissipation | Ptot | - | - | 215 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | - | - | 0.45 | °C/W | - |
| Input Capacitance | Ciss | - | 1600 | - | pF | VDS = 25 V, f = 1 MHz |
| Output Capacitance | Coss | - | 125 | - | pF | VDS = 25 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 40 | - | pF | VDS = 25 V, f = 1 MHz |
| Gate Charge | QG | - | 105 | - | nC | VGS = 10 V, ID = 29 A |
| Turn-On Delay Time | td(on) | - | 42 | - | ns | VGS = 10 V, ID = 29 A, RG = 2 Ω |
| Rise Time | tr | - | 28 | - | ns | VGS = 10 V, ID = 29 A, RG = 2 Ω |
| Turn-Off Delay Time | td(off) | - | 24 | - | ns | VGS = 10 V, ID = 29 A, RG = 2 Ω |
| Fall Time | tf | - | 16 | - | ns | VGS = 10 V, ID = 29 A, RG = 2 Ω |
Instructions for Use:
Mounting and Handling:
- Ensure that the device is handled with care to avoid damage to the leads and the body.
- Mount the device on a heatsink to manage thermal resistance and ensure proper heat dissipation.
Biasing and Drive:
- Apply the gate-source voltage (VGS) within the specified limits to avoid damaging the gate oxide.
- Use appropriate gate drive circuits to ensure fast and reliable switching.
Thermal Management:
- Monitor the junction temperature (TJ) to prevent overheating.
- Use thermal grease or thermal pads between the device and the heatsink to improve thermal conductivity.
Electrical Stress:
- Do not exceed the maximum drain-source voltage (VDS) or continuous drain current (ID).
- Ensure that the power dissipation (Ptot) does not exceed the rated value.
Storage and Operating Conditions:
- Store the device in a dry, cool environment within the specified storage temperature range.
- Operate the device within the specified operating temperature range to ensure reliability and longevity.
Capacitance and Inductance:
- Consider the input, output, and reverse transfer capacitances when designing the circuit to minimize parasitic effects.
- Keep the gate drive loop inductance low to reduce ringing and overshoot during switching.
Testing and Troubleshooting:
- Test the device under controlled conditions to verify its performance.
- Use oscilloscopes and other diagnostic tools to monitor waveforms and identify any issues.
By following these instructions, you can ensure optimal performance and reliability of the IRFI3205PBF MOSFET.
(For reference only)Inquiry - IRFI3205PBF
