Specifications
SKU: 11531357
Description: This is a N-channel MOSFET with a maximum drain-source voltage of 200V and a maximum drain current of 38A. It has a low gate-source threshold voltage of 2V and a maximum power dissipation of 120W. Features: Low gate-source threshold voltage of 2V Maximum drain-source voltage of 200V Maximum drain current of 38A Maximum power dissipation of 120W Low on-resistance High switching speed Applications: DC/DC converters Motor control Power management Load switching Battery management (For reference only)
Inquiry - IRFB38N20DPBF,IRFB38N20D