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Specifications
SKU: 11531397
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | - | 800 | V | Maximum voltage between collector and emitter with the base open. |
| Collector-Base Voltage | VCB | - | - | 800 | V | Maximum voltage between collector and base with the emitter open. |
| Emitter-Base Voltage | VEB | - | - | 7 | V | Maximum voltage between emitter and base with the collector open. |
| Continuous Collector Current | IC | - | - | 12 | A | Maximum continuous current through the collector. |
| Continuous Collector Dissipation | Ptot | - | - | 250 | W | Maximum power dissipation at the collector. |
| Junction Temperature | TJ | -20 | - | 150 | °C | Operating temperature range for the junction. |
| Storage Temperature | TSTG | -65 | - | 150 | °C | Temperature range for storage. |
| Total Device Dissipation | PTOT | - | - | 250 | W | Maximum total power dissipation. |
| Forward Transconductance | gfs | - | 15 | - | S | Forward transconductance at IC = 10A, VCE = 10V. |
| Saturation Voltage | VCE(sat) | - | 1.8 | - | V | Collector-emitter saturation voltage at IC = 10A, IB = 1A. |
| Base-Emitter Saturation Voltage | VBE(sat) | - | 2.5 | - | V | Base-emitter saturation voltage at IC = 10A, IB = 1A. |
| Turn-On Time | ton | - | 0.4 | - | μs | Time from 10% to 90% of IC during turn-on. |
| Turn-Off Time | toff | - | 1.5 | - | μs | Time from 90% to 10% of IC during turn-off. |
| Storage Time | tstg | - | 0.3 | - | μs | Time from 90% of IC to 90% of VCE. |
| Reverse Recovery Time | trr | - | 1.8 | - | μs | Time for the diode to recover from reverse current. |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage the maximum power dissipation.
- Handle the device with care to avoid damage to the leads and the silicon die.
Biasing and Operation:
- Ensure that the base current (IB) is sufficient to keep the transistor in saturation when operating in the on-state.
- Keep the junction temperature within the specified range to prevent thermal runaway.
Storage:
- Store the device in a dry, cool place within the specified storage temperature range.
Testing:
- Use appropriate test equipment and methods to avoid overstressing the device during testing.
- Follow the datasheet recommendations for test conditions.
Safety:
- Ensure that all safety guidelines are followed when handling high-voltage and high-current circuits.
- Use protective equipment as necessary.
Soldering:
- Use a controlled soldering process to avoid exceeding the maximum junction temperature.
- Allow the device to cool down to room temperature before applying power.
Applications:
- Suitable for high-power switching applications, motor control, and power supplies.
- Ensure that the device is used within its safe operating area (SOA) to prevent damage.
Inquiry - UTC12N80L 12N80L
