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Specifications
SKU: 11531573
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 55 | - | V |
| Gate-Source Voltage | VGS | - | - | ±20 | - | V |
| Continuous Drain Current (TC = 25°C) | ID(25°C) | - | - | 40 | - | A |
| Continuous Drain Current (TC = 100°C) | ID(100°C) | - | - | 25 | - | A |
| Pulse Drain Current (tp = 10 ms, duty cycle = 1%) | IDpeak | - | - | 100 | - | A |
| Gate Charge | QG | VGS = 10V, ID = 40A | - | 100 | - | nC |
| Input Capacitance | Ciss | VDS = 25V, f = 1 MHz | - | 3500 | - | pF |
| Output Capacitance | Coss | VDS = 25V, f = 1 MHz | - | 110 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 25V, VGS = 0V, f = 1 MHz | - | 300 | - | pF |
| On-State Resistance (VGS = 10V) | RDS(on) | ID = 40A, TC = 25°C | - | 3.5 | - | mΩ |
| On-State Resistance (VGS = 10V) | RDS(on) | ID = 40A, TC = 100°C | - | 5.5 | - | mΩ |
| Gate-Source Threshold Voltage | VGS(th) | ID = 250 μA, TA = 25°C | 2.0 | - | 4.0 | V |
| Total Power Dissipation (TC = 25°C) | PTOT | - | - | 150 | - | W |
| Junction to Ambient Thermal Resistance | RθJA | - | - | 62 | - | °C/W |
| Junction to Case Thermal Resistance | RθJC | - | - | 0.5 | - | °C/W |
| Storage Temperature Range | Tstg | - | -65 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- The IRF2807S is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
- Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
Mounting:
- Ensure good thermal management by using a heatsink if necessary, especially when operating at high currents or power levels.
- Use a thermal interface material (TIM) between the device and the heatsink to improve heat dissipation.
Biasing:
- Apply the gate-source voltage (VGS) carefully to ensure it stays within the recommended range to avoid damaging the gate.
- For optimal performance, use a gate driver circuit that can provide the required gate current quickly to minimize switching losses.
Operation:
- Operate the device within the specified temperature range to ensure reliable performance and longevity.
- Monitor the junction temperature (TJ) to avoid overheating, which can lead to reduced lifespan and potential failure.
Testing:
- When testing the device, use the specified test conditions to accurately measure parameters such as on-state resistance (RDS(on)) and gate charge (QG).
Storage:
- Store the device in a dry, cool environment to prevent moisture damage and degradation over time.
By following these guidelines, you can ensure the reliable and efficient operation of the IRF2807S TO-263 transistor.
(For reference only)Inquiry - IRF2807STRPBF IRF2807S TO-263
