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Specifications
SKU: 11532536
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 800 | V | - |
| Gate-Source Voltage | VGS | ±20 | V | - |
| Continuous Drain Current | ID | 10 | A | TC = 25°C |
| Pulse Drain Current | ID(pulse) | 30 | A | tp = 10 μs, IGT = 10 A |
| Total Power Dissipation | PTOT | 180 | W | TC = 25°C |
| Junction Temperature | TJ | -55 to 175 | °C | - |
| Storage Temperature Range | TSTG | -65 to 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | 0.9 | °C/W | - |
| Gate Charge | QG | 140 | nC | VGS = 15 V, ID = 10 A |
| Input Capacitance | Ciss | 2200 | pF | VDS = 400 V, f = 1 MHz |
| Output Capacitance | Coss | 250 | pF | VDS = 400 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 400 | pF | VDS = 400 V, f = 1 MHz |
| On-State Resistance | RDS(on) | 1.8 | Ω | VGS = 10 V, ID = 10 A |
| Gate Threshold Voltage | VGS(th) | 2.0 to 4.0 | V | ID = 1 mA |
| Turn-On Delay Time | td(on) | 40 | ns | VGS = 15 V, ID = 10 A, RG = 2 Ω |
| Rise Time | tr | 50 | ns | VGS = 15 V, ID = 10 A, RG = 2 Ω |
| Turn-Off Delay Time | td(off) | 50 | ns | VGS = -15 V, ID = 10 A, RG = 2 Ω |
| Fall Time | tf | 60 | ns | VGS = -15 V, ID = 10 A, RG = 2 Ω |
Instructions for Use:
Handling Precautions:
- The FMV10N80E is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
- Avoid exposing the device to temperatures outside the specified storage temperature range.
Mounting:
- Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within the specified limits.
- Use a thermal interface material (TIM) between the device and the heat sink for better thermal conductivity.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to avoid damage.
- Ensure the drain-source voltage (VDS) does not exceed the maximum rating.
Operation:
- Operate the device within the continuous and pulse current ratings to prevent overheating and potential failure.
- Monitor the power dissipation and ensure it does not exceed the total power dissipation limit.
Testing:
- Use the specified test conditions for accurate parameter measurements.
- Verify the gate threshold voltage (VGS(th)) and on-state resistance (RDS(on)) during initial testing to ensure the device is functioning correctly.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Keep the device in its original packaging until ready for use.
Safety:
- Always follow safety guidelines when handling high-voltage circuits.
- Ensure all connections are secure and insulated to prevent short circuits and electrical hazards.
Inquiry - FMV10N80E
