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BD679-A BD679A

Specifications

SKU: 11533037

BUY BD679-A BD679A https://www.utsource.net/itm/p/11533037.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCEO - - 80 V IC = 5mA, TA = 25°C
Emitter-Collector Voltage VECS - - 80 V IC = 5mA, TA = 25°C
Base-Emitter Voltage VBE - 1.8 2.5 V IC = 500mA, TA = 25°C
Collector Current IC - - 5 A TA = 25°C
Continuous Collector Current IC(max) - - 3 A TC = 25°C
Power Dissipation PD - - 65 W TC = 25°C
Storage Temperature Range TSTG -40 - 150 °C -
Operating Junction Temperature TJ -50 - 150 °C -
Forward Current Transfer Ratio hFE 15 50 300 - IC = 500mA, VCE = 5V, TA = 25°C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the BD679A with care to avoid mechanical stress.
    • Ensure proper heat sinking if operating at high power levels to maintain junction temperature within safe limits.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly.
    • Use appropriate wire gauges to handle the current ratings.
  3. Thermal Management:

    • For continuous operation at high currents, use a heatsink to dissipate heat effectively.
    • Ensure adequate ventilation around the component to prevent overheating.
  4. Biasing:

    • Bias the base-emitter junction correctly to ensure the transistor operates in the desired region (saturation, active, or cutoff).
  5. Overvoltage Protection:

    • Consider using clamping diodes or other protective circuits to prevent damage from voltage spikes.
  6. Storage:

    • Store the BD679A in a dry, cool place away from direct sunlight and extreme temperatures.
  7. Testing:

    • Test the BD679A under controlled conditions to verify its performance before integrating it into a circuit.
  8. Compliance:

    • Ensure that the application complies with relevant safety and regulatory standards.
(For reference only)

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