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STP110N7F6 P110N7F6

Specifications

SKU: 11533154

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Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS - - 700 V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - - 110 A @ TC = 25°C
Power Dissipation PD - - 300 W @ TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature Range TSTG -65 - 175 °C

Instructions:

  1. Handling and Storage:

    • Store the device in a dry, cool place to avoid moisture damage.
    • Handle with care to prevent static discharge (ESD) which can damage the device.
  2. Mounting and Assembly:

    • Ensure proper thermal management by using a heatsink if necessary, especially for high-power applications.
    • Follow the recommended PCB layout guidelines to ensure optimal performance and reliability.
    • Use appropriate soldering techniques and temperatures to avoid thermal stress on the device.
  3. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals as per the circuit design.
    • Ensure that the gate-source voltage (VGS) is within the specified range to avoid damaging the device.
    • Use decoupling capacitors near the power supply lines to filter out noise and provide stable operation.
  4. Operational Considerations:

    • Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
    • For continuous operation, ensure that the power dissipation (PD) is within the specified limits.
    • If operating at high currents, consider the on-state resistance (RDS(on)) to minimize power loss and heat generation.
  5. Testing and Troubleshooting:

    • Use a multimeter or oscilloscope to verify the correct operation of the device.
    • Check for any signs of overheating or abnormal behavior.
    • Refer to the datasheet for detailed testing procedures and troubleshooting tips.

For more detailed information, refer to the official datasheet provided by STMicroelectronics.

(For reference only)

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