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BZX84C16/TR

Specifications

SKU: 11533604

BUY BZX84C16/TR https://www.utsource.net/itm/p/11533604.html

Parameter Symbol Min Typ Max Unit Description
Reverse Breakdown Voltage VR - 16 - V Reverse breakdown voltage at specified current
Maximum Repetitive Peak Reverse Current IRRM - 5 - mA Maximum repetitive peak reverse current
Maximum Average Rectified Forward Current IF(AV) - 5 - mA Maximum average rectified forward current
Maximum Power Dissipation PD - - 200 mW Maximum power dissipation
Operating Junction Temperature TJ -40 - 150 °C Operating junction temperature range
Storage Temperature Range TSTG -65 - 150 °C Storage temperature range
Thermal Resistance, Junction to Ambient RθJA - 300 - K/W Thermal resistance, junction to ambient

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid mechanical damage.
    • Avoid exposure to excessive humidity and corrosive environments.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Use appropriate soldering techniques to prevent thermal shock.
  3. Electrical Connections:

    • Connect the cathode (K) to the positive side of the circuit.
    • Connect the anode (A) to the negative side of the circuit.
  4. Operating Conditions:

    • Do not exceed the maximum reverse voltage (VR).
    • Ensure the operating junction temperature (TJ) remains within the specified range.
    • Keep the power dissipation (PD) below the maximum limit to avoid overheating.
  5. Testing:

    • Test the device under controlled conditions to ensure it meets the specified parameters.
    • Use a constant current source to measure the reverse breakdown voltage accurately.
  6. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Follow the storage temperature range (TSTG) to maintain device integrity.
  7. Disposal:

    • Dispose of the device according to local environmental regulations.
(For reference only)

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