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MJ15024G MJ15025G A PAIR

Specifications

SKU: 11533750

BUY MJ15024G MJ15025G A PAIR https://www.utsource.net/itm/p/11533750.html

Parameter MJ15024G (NPN) MJ15025G (PNP)
Type NPN Power Transistor PNP Power Transistor
Collector-Emitter Voltage (Vceo) 80 V 80 V
Emitter-Collector Voltage (Vceo) - 80 V
Collector-Base Voltage (Vcbo) 80 V 80 V
Emitter-Base Voltage (Vebo) 6 V 6 V
Continuous Collector Current (Ic) 15 A 15 A
Peak Collector Current (Icm) 30 A 30 A
Power Dissipation (Ptot) 125 W 125 W
Storage Temperature (Tstg) -55°C to +150°C -55°C to +150°C
Operating Junction Temperature (Tj) -55°C to +150°C -55°C to +150°C
Case Style TO-3P TO-3P

Instructions for Use:

  1. Mounting:

    • Ensure that the transistors are securely mounted to a heat sink to dissipate heat effectively.
    • Use thermal compound between the transistor and the heat sink to improve thermal conductivity.
  2. Biasing:

    • For the NPN (MJ15024G), apply a positive base-emitter voltage (Vbe) to turn the transistor on.
    • For the PNP (MJ15025G), apply a negative base-emitter voltage (Vbe) to turn the transistor on.
  3. Current Limiting:

    • Use appropriate current-limiting resistors in the base circuit to prevent excessive base current, which can damage the transistors.
  4. Protection:

    • Consider using diodes (e.g., flyback diodes) to protect the transistors from inductive spikes in circuits with inductive loads.
  5. Storage:

    • Store the transistors in a dry, cool place away from direct sunlight and extreme temperatures.
  6. Handling:

    • Handle the transistors with care to avoid mechanical damage or static discharge, which can damage the devices.
  7. Testing:

    • Before installing the transistors in a circuit, test them using a multimeter or transistor tester to ensure they are functioning correctly.

By following these instructions, you can ensure optimal performance and longevity of the MJ15024G and MJ15025G transistors.

(For reference only)

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