Specifications
SKU: 11533750
Parameter | MJ15024G (NPN) | MJ15025G (PNP) |
---|---|---|
Type | NPN Power Transistor | PNP Power Transistor |
Collector-Emitter Voltage (Vceo) | 80 V | 80 V |
Emitter-Collector Voltage (Vceo) | - | 80 V |
Collector-Base Voltage (Vcbo) | 80 V | 80 V |
Emitter-Base Voltage (Vebo) | 6 V | 6 V |
Continuous Collector Current (Ic) | 15 A | 15 A |
Peak Collector Current (Icm) | 30 A | 30 A |
Power Dissipation (Ptot) | 125 W | 125 W |
Storage Temperature (Tstg) | -55°C to +150°C | -55°C to +150°C |
Operating Junction Temperature (Tj) | -55°C to +150°C | -55°C to +150°C |
Case Style | TO-3P | TO-3P |
Instructions for Use:
Mounting:
- Ensure that the transistors are securely mounted to a heat sink to dissipate heat effectively.
- Use thermal compound between the transistor and the heat sink to improve thermal conductivity.
Biasing:
- For the NPN (MJ15024G), apply a positive base-emitter voltage (Vbe) to turn the transistor on.
- For the PNP (MJ15025G), apply a negative base-emitter voltage (Vbe) to turn the transistor on.
Current Limiting:
- Use appropriate current-limiting resistors in the base circuit to prevent excessive base current, which can damage the transistors.
Protection:
- Consider using diodes (e.g., flyback diodes) to protect the transistors from inductive spikes in circuits with inductive loads.
Storage:
- Store the transistors in a dry, cool place away from direct sunlight and extreme temperatures.
Handling:
- Handle the transistors with care to avoid mechanical damage or static discharge, which can damage the devices.
Testing:
- Before installing the transistors in a circuit, test them using a multimeter or transistor tester to ensure they are functioning correctly.
By following these instructions, you can ensure optimal performance and longevity of the MJ15024G and MJ15025G transistors.
(For reference only)Inquiry - MJ15024G MJ15025G A PAIR