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2SD1898

Specifications

SKU: 11533946

BUY 2SD1898 https://www.utsource.net/itm/p/11533946.html

Parameter Symbol Value Unit
Collector-Emitter Voltage VCE 600 V
Emitter-Base Voltage VEB 5 V
Collector Current IC 15 A
Base Current IB 3 A
Power Dissipation PT 180 W
Junction Temperature TJ -55 to 150 °C
Storage Temperature TSTG -55 to 150 °C
Transition Frequency fT 4 MHz
Continuous Collector-Emitter Saturation Voltage VCE(sat) 1.8 (IC=15A, IB=1.5A) V
Continuous Emitter-Base Saturation Voltage VEB(sat) 1.8 (IC=15A, IB=1.5A) V

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the power dissipation.
    • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
  2. Biasing:

    • Set the base current (IB) appropriately to ensure the transistor operates in the desired region (saturation, active, or cutoff).
    • For saturation, ensure IB is sufficiently high to fully turn on the transistor.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Monitor the junction temperature (TJ) to avoid overheating.
  4. Storage:

    • Store the transistor in a dry, cool place within the specified storage temperature range.
    • Handle with care to avoid static discharge damage.
  5. Testing:

    • Use a multimeter to check for continuity and resistance values to verify the integrity of the transistor.
    • Perform functional tests under controlled conditions to ensure proper operation.
  6. Soldering:

    • Use a low-temperature soldering iron to avoid damaging the transistor.
    • Ensure the leads are clean and free of oxidation before soldering.
  7. Safety:

    • Always disconnect the power supply when making connections or modifications.
    • Use appropriate safety gear and follow all electrical safety guidelines.
(For reference only)

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