Specifications
SKU: 11533946
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCE | 600 | V |
Emitter-Base Voltage | VEB | 5 | V |
Collector Current | IC | 15 | A |
Base Current | IB | 3 | A |
Power Dissipation | PT | 180 | W |
Junction Temperature | TJ | -55 to 150 | °C |
Storage Temperature | TSTG | -55 to 150 | °C |
Transition Frequency | fT | 4 | MHz |
Continuous Collector-Emitter Saturation Voltage | VCE(sat) | 1.8 (IC=15A, IB=1.5A) | V |
Continuous Emitter-Base Saturation Voltage | VEB(sat) | 1.8 (IC=15A, IB=1.5A) | V |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the power dissipation.
- Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
Biasing:
- Set the base current (IB) appropriately to ensure the transistor operates in the desired region (saturation, active, or cutoff).
- For saturation, ensure IB is sufficiently high to fully turn on the transistor.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Monitor the junction temperature (TJ) to avoid overheating.
Storage:
- Store the transistor in a dry, cool place within the specified storage temperature range.
- Handle with care to avoid static discharge damage.
Testing:
- Use a multimeter to check for continuity and resistance values to verify the integrity of the transistor.
- Perform functional tests under controlled conditions to ensure proper operation.
Soldering:
- Use a low-temperature soldering iron to avoid damaging the transistor.
- Ensure the leads are clean and free of oxidation before soldering.
Safety:
- Always disconnect the power supply when making connections or modifications.
- Use appropriate safety gear and follow all electrical safety guidelines.
Inquiry - 2SD1898