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2SC4536

Specifications

SKU: 11533967

BUY 2SC4536 https://www.utsource.net/itm/p/11533967.html

Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCEO - - 100 V IC = 500 mA
Emitter-Base Voltage VEBO - - 5 V IEBO = 5 mA
Collector-Base Voltage VCBO - - 100 V ICBO = 100 μA
Collector Current IC - - 500 mA VCE = 10 V
Base Current IB - - 50 mA VBE = 1 V
DC Current Gain hFE 100 250 500 - IC = 50 mA, VCE = 10 V
Transition Frequency fT - 150 300 MHz IC = 50 mA, VCE = 10 V
Storage Temperature TSTG -55 - 150 °C -
Operating Temperature TOP -55 - 150 °C -
Power Dissipation PT - - 625 mW TA = 25 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures outside the specified operating range.
    • Handle with care to prevent static damage.
  2. Mounting:

    • Ensure proper heat sinking if the device is expected to dissipate significant power.
    • Follow recommended soldering profiles to avoid thermal stress.
  3. Biasing:

    • Ensure that the base current (IB) is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
    • Use appropriate biasing circuits to maintain stability and prevent thermal runaway.
  4. Testing:

    • Test the transistor under controlled conditions to ensure it meets the specified parameters.
    • Use a curve tracer or equivalent equipment to verify the characteristics.
  5. Storage:

    • Store the transistors in a dry, cool place away from direct sunlight.
    • Keep in original packaging until ready for use to protect against static discharge.
  6. Soldering:

    • Solder at a temperature of 260°C for no more than 10 seconds.
    • Allow the device to cool naturally after soldering to avoid thermal shock.
  7. Application Notes:

    • The 2SC4536 is suitable for general-purpose amplification and switching applications.
    • For high-frequency applications, consider the transition frequency (fT) to ensure adequate performance.
(For reference only)

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