Specifications
SKU: 11533968
Parameter | Symbol | Min | Typical | Max | Unit | Condition |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 800 | V | |
Emitter-Base Voltage | VEB | - | - | 5 | V | |
Collector Current | IC | - | - | 15 | A | |
Base Current | IB | - | - | 1 | A | |
Power Dissipation | PT | - | - | 180 | W | Case temperature TC = 25°C |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
Operating Junction Temperature | TJ | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Handle the 2SJ317 with care to avoid mechanical damage.
- Ensure proper heat sinking to manage power dissipation, especially when operating at high currents.
Electrical Connections:
- Connect the collector (C), base (B), and emitter (E) terminals correctly.
- Use appropriate wire gauges to handle the rated current without excessive resistance.
Biasing:
- Apply the correct biasing conditions to ensure the transistor operates in the desired region (cut-off, active, or saturation).
- Ensure the base-emitter voltage (VEB) does not exceed the maximum rating.
Thermal Management:
- Monitor the junction temperature (TJ) to prevent overheating.
- Use thermal compounds to improve heat transfer from the transistor to the heat sink.
Protection:
- Consider using overvoltage protection (e.g., TVS diodes) to protect against transient voltages.
- Implement current limiting circuits to prevent exceeding the maximum collector current (IC).
Storage:
- Store the 2SJ317 in a dry, cool place within the specified storage temperature range.
- Avoid exposure to static electricity, which can damage the device.
Testing:
- Test the transistor under controlled conditions to verify its performance before integrating it into the final application.
- Use a multimeter or a dedicated transistor tester to check for continuity and correct operation.
By following these guidelines, you can ensure reliable and efficient operation of the 2SJ317 transistor.
(For reference only)Inquiry - 2SJ317