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2SJ317

Specifications

SKU: 11533968

BUY 2SJ317 https://www.utsource.net/itm/p/11533968.html

Parameter Symbol Min Typical Max Unit Condition
Collector-Emitter Voltage VCE - - 800 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - - 15 A
Base Current IB - - 1 A
Power Dissipation PT - - 180 W Case temperature TC = 25°C
Storage Temperature Range TSTG -55 - 150 °C
Operating Junction Temperature TJ -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SJ317 with care to avoid mechanical damage.
    • Ensure proper heat sinking to manage power dissipation, especially when operating at high currents.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly.
    • Use appropriate wire gauges to handle the rated current without excessive resistance.
  3. Biasing:

    • Apply the correct biasing conditions to ensure the transistor operates in the desired region (cut-off, active, or saturation).
    • Ensure the base-emitter voltage (VEB) does not exceed the maximum rating.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to prevent overheating.
    • Use thermal compounds to improve heat transfer from the transistor to the heat sink.
  5. Protection:

    • Consider using overvoltage protection (e.g., TVS diodes) to protect against transient voltages.
    • Implement current limiting circuits to prevent exceeding the maximum collector current (IC).
  6. Storage:

    • Store the 2SJ317 in a dry, cool place within the specified storage temperature range.
    • Avoid exposure to static electricity, which can damage the device.
  7. Testing:

    • Test the transistor under controlled conditions to verify its performance before integrating it into the final application.
    • Use a multimeter or a dedicated transistor tester to check for continuity and correct operation.

By following these guidelines, you can ensure reliable and efficient operation of the 2SJ317 transistor.

(For reference only)

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