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Specifications
SKU: 11534646
Below is the parameter table and instructions for the SW50N06 MOSFET:
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 60 | V | |
| Gate-Source Voltage | VGS | -10 | - | 20 | V | |
| Continuous Drain Current | ID | - | - | 50 | A | TC = 25°C |
| Continuous Drain Current | ID | - | - | 30 | A | TC = 75°C |
| Pulse Drain Current | ID(p) | - | - | 100 | A | tp = 10ms, TC = 25°C |
| Power Dissipation | PTOT | - | - | 125 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature | TSTG | -55 | - | 150 | °C | |
| Gate Charge | QG | - | 14 | - | nC | VGS = 10V |
| Input Capacitance | Ciss | - | 1200 | - | pF | VDS = 25V |
| Output Capacitance | Coss | - | 200 | - | pF | VDS = 25V |
| Reverse Transfer Capacitance | Crss | - | 300 | - | pF | VDS = 25V |
| Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.5 | V | ID = 250μA |
| On-State Resistance | RDS(on) | - | 0.018 | - | Ω | VGS = 10V, ID = 50A |
| Maximum Operating Frequency | fmax | - | - | 500 | kHz |
Instructions
Handling Precautions:
- ESD Sensitivity: The SW50N06 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
- Heat Sinking: For applications requiring high current or power dissipation, ensure adequate heat sinking to keep the junction temperature within safe limits.
Mounting:
- Surface Mount (SMD): Follow the recommended soldering profile to avoid thermal shock and ensure good thermal conductivity.
- Through-Hole Mounting: Ensure proper mechanical support and thermal management, especially for high-power applications.
Biasing:
- Gate Drive: Apply a gate voltage (VGS) between 10V and 20V to fully turn on the MOSFET. Avoid exceeding the maximum gate-source voltage (VGS(max)).
- Turn-Off: Ensure the gate is pulled to a low voltage (e.g., 0V) to turn off the MOSFET. Use a pull-down resistor if necessary.
Thermal Management:
- Heatsinks: Use heatsinks or thermal vias to dissipate heat effectively. The thermal resistance (RθJC) from junction to case should be considered in the design.
- Ambient Temperature: Ensure the ambient temperature does not exceed the maximum operating temperature (TJ(max)).
Pulse Operation:
- Pulse Current: The pulse drain current (ID(p)) can be higher than the continuous drain current, but ensure the pulse duration and frequency do not exceed the specified limits to avoid overheating.
Storage:
- Temperature Range: Store the device in a dry environment within the storage temperature range (-55°C to 150°C).
Testing:
- Functional Testing: Test the device under controlled conditions to verify its performance. Check the on-state resistance (RDS(on)) and threshold voltage (VGS(th)) as key parameters.
By following these instructions, you can ensure reliable operation and longevity of the SW50N06 MOSFET in your application.
(For reference only)Inquiry - SW50N06
