Specifications
SKU: 11535013
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | V_DS | - | - | 150 | V |
Gate-Source Voltage | V_GS | - | - | 30 | V |
Drain Current | I_D | - | 0.1 | 1.5 | A |
Gate Leakage Current | I_GS | - | - | 10 | nA |
Transconductance | g_fs | - | 800 | - | mS |
Power Dissipation | P_T | - | - | 650 | mW |
Junction Temperature | T_j | - | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings listed to prevent damage.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure the device is mounted on a suitable heatsink if operating at high power levels.
- Follow recommended PCB layout guidelines to ensure optimal performance and thermal management.
Biasing:
- Apply the gate-source voltage (V_GS) within the specified range to control the drain current (I_D).
- Ensure the gate is properly biased to avoid excessive gate leakage current.
Operating Conditions:
- Operate the device within the recommended temperature range to avoid thermal runaway.
- Monitor the junction temperature (T_j) to ensure it does not exceed the maximum rating.
Testing:
- Use a constant current source or a suitable load to test the device under controlled conditions.
- Verify the transconductance (g_fs) and other parameters using standard test equipment.
Storage:
- Store the device in a dry, cool place away from direct sunlight.
- Keep the device in its original packaging until ready for use to protect against static damage.
Inquiry - 2N5064?