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2N5064?

Specifications

SKU: 11535013

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Parameter Symbol Min Typical Max Unit
Drain-Source Voltage V_DS - - 150 V
Gate-Source Voltage V_GS - - 30 V
Drain Current I_D - 0.1 1.5 A
Gate Leakage Current I_GS - - 10 nA
Transconductance g_fs - 800 - mS
Power Dissipation P_T - - 650 mW
Junction Temperature T_j - - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings listed to prevent damage.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure the device is mounted on a suitable heatsink if operating at high power levels.
    • Follow recommended PCB layout guidelines to ensure optimal performance and thermal management.
  3. Biasing:

    • Apply the gate-source voltage (V_GS) within the specified range to control the drain current (I_D).
    • Ensure the gate is properly biased to avoid excessive gate leakage current.
  4. Operating Conditions:

    • Operate the device within the recommended temperature range to avoid thermal runaway.
    • Monitor the junction temperature (T_j) to ensure it does not exceed the maximum rating.
  5. Testing:

    • Use a constant current source or a suitable load to test the device under controlled conditions.
    • Verify the transconductance (g_fs) and other parameters using standard test equipment.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to protect against static damage.
(For reference only)

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