Share:


2SK683

Specifications

SKU: 11535092

BUY 2SK683 https://www.utsource.net/itm/p/11535092.html

Parameter Symbol Min Typ Max Unit
Drain-Source Voltage VDS -500 - -1000 V
Gate-Source Voltage VGS -20 - 20 V
Drain Current ID - - 10 A
Gate Threshold Voltage VGS(th) 2 - 4 V
Transconductance gfs 1.5 - 3.5 S
Input Capacitance Ciss - 1000 - pF
Output Capacitance Coss - 300 - pF
Reverse Transfer Capacitance Crss - 150 - pF
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SK683 with care to avoid damage to the pins and the semiconductor structure.
    • Use appropriate ESD (Electrostatic Discharge) protection measures to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat to ensure good thermal contact.
    • Apply a suitable thermal compound between the device and the heatsink to enhance heat dissipation.
  3. Biasing:

    • The gate-source voltage (VGS) should be kept within the specified limits to avoid damaging the device.
    • The drain current (ID) should not exceed the maximum rating to prevent overheating and potential failure.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it stays within the safe operating range.
    • Use a heatsink if necessary to maintain the device temperature within the specified limits.
  5. Testing:

    • When testing the device, use a low current initially to verify proper operation before increasing the load.
    • Ensure all connections are secure and correctly wired to avoid short circuits or incorrect biasing.
  6. Storage:

    • Store the 2SK683 in a dry, cool place away from direct sunlight and extreme temperatures.
    • Keep the device in its original packaging until ready for use to protect it from environmental factors.
(For reference only)

 Inquiry - 2SK683