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Specifications
SKU: 11535654
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| On-State Resistance | RDS(on) | - | 110 | - | mΩ | VGS = 10V, ID = 20A |
| Gate Charge | QG | - | 34 | - | nC | VGS = 10V, ID = 20A |
| Input Capacitance | Ciss | - | 2900 | - | pF | VDS = 650V, f = 1MHz |
| Output Capacitance | Coss | - | 280 | - | pF | VDS = 650V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 370 | - | pF | VDS = 650V, f = 1MHz |
| Maximum Drain-Source Voltage | VDS(max) | - | - | 650 | V | |
| Maximum Gate-Source Voltage | VGS(max) | - | - | ±20 | V | |
| Maximum Drain Current | ID(max) | - | - | 20 | A | Pulse, Tj = 25°C |
| Maximum Power Dissipation | Ptot(max) | - | - | 140 | W | TC = 25°C |
| Junction Temperature Range | Tj(op) | -55 | - | 175 | °C | |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Thermal Management:
- Ensure adequate heat sinking to manage the maximum power dissipation (Ptot(max)) and keep the junction temperature (Tj(op)) within safe limits.
Gate Drive:
- Apply a gate-source voltage (VGS) of at least 10V to fully turn on the MOSFET and minimize RDS(on).
- Avoid exceeding the maximum gate-source voltage (VGS(max)) of ±20V to prevent damage.
Current Handling:
- Do not exceed the maximum drain current (ID(max)) of 20A, especially under pulse conditions, to avoid overheating.
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 650V to prevent breakdown.
Capacitance Considerations:
- Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in your circuit design to optimize switching performance and reduce electromagnetic interference (EMI).
Environmental Conditions:
- Operate the device within the specified junction temperature range (-55°C to 175°C) and storage temperature range (-55°C to 150°C) to ensure reliability and longevity.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage the sensitive MOSFET structure.
- Follow proper soldering techniques and avoid excessive thermal stress during assembly.
Inquiry - IPW65R110CFD
