Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
   • The device operates with a typical standby current of 1 μA and an active current of 10 mA.

2. Timing Parameters:

   • The access time (tACC) is 70 ns, which is the time required to read data from the memory.
   • The write cycle time (tWC) is between 5 ms and 10 ms.
   • The block erase time (tBE) ranges from 200 ms to 400 ms.

3. Control Signals:

   • Proper setup and hold times for control signals (Chip Enable, Output Enable, Write Enable) must be observed to ensure reliable operation.
   • For example, the chip enable setup time (tCES) and hold time (tCEH) are both 10 ns.

4. Data and Address Lines:

   • Ensure that data and address lines meet the setup and hold time requirements to prevent data corruption.
   • Data setup time (tDS) is 10 ns, and data hold time (tDH) is 5 ns.

5. Power Management:

   • The power-down time (tPD) is 10 μs, and the power-up time (tPU) is also 10 μs.
   • During power-down, the high-Z output leakage (IZ) should not exceed 5 μA.

6. Output Levels:

   • The output low voltage (VOL) should not exceed 0.4V.
   • The output high voltage (VOH) should be at least 2.4V and can go up to the supply voltage (VCC).

7. Handling and Storage:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Store the device in a dry environment to prevent moisture damage.

8. Programming:

   • Follow the programming sequence specified in the device datasheet for writing and erasing operations.
   • Ensure that the device is properly configured before performing any write or erase operations.