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Specifications
SKU: 11539936
| Parameter | Symbol | Min | Typical | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 60 | - | V | Continuous |
| Gate-Source Voltage | VGS | -15 | - | 15 | V | Continuous |
| Continuous Drain Current | ID | - | 4.0 | - | A | @ TA = 25°C |
| Pulse Drain Current | ID(p) | - | 8.0 | - | A | @ TC = 25°C, tp = 10 ms, Duty Cycle = 1% |
| Gate Charge | QG | - | 70 | - | nC | @ VGS = 10V |
| Input Capacitance | Ciss | - | 2200 | - | pF | @ VDS = 10V |
| Output Capacitance | Coss | - | 560 | - | pF | @ VDS = 10V |
| Reverse Transfer Capacitance | Crss | - | 480 | - | pF | @ VDS = 10V |
| On-State Resistance | RDS(on) | - | 0.018 | - | Ω | @ VGS = 10V, ID = 4A |
| Threshold Voltage | VGS(th) | 1.0 | 1.5 | 2.5 | V | @ ID = 250 μA |
| Total Power Dissipation | PTOT | - | 110 | - | W | @ TC = 25°C |
| Junction Temperature | TJ | -55 | - | 175 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
Instructions for Use:
Handling Precautions:
- Handle the VND92013TR with care to avoid damage to the pins and the die.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure that the device is mounted on a suitable heatsink to manage thermal dissipation effectively.
- Use thermal paste between the device and the heatsink to improve heat transfer.
Biasing:
- Apply the gate-source voltage (VGS) within the specified limits to avoid damaging the device.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
Current Limiting:
- Do not exceed the continuous drain current (ID) or pulse drain current (ID(p)) ratings.
- Use appropriate current limiting resistors if necessary.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it remains within the safe operating range.
- If the device is operating at high temperatures, consider using forced air cooling or a larger heatsink.
Storage:
- Store the device in a dry, cool environment within the specified storage temperature range (TSTG).
Testing:
- When testing the device, use a controlled environment to avoid exceeding any of the maximum ratings.
- Verify the on-state resistance (RDS(on)) and threshold voltage (VGS(th)) to ensure the device is functioning correctly.
Inquiry - VND92013TR
