Specifications
SKU: 11540105
Parameter | Description | Value |
---|---|---|
Part Number | Full part number | K6X1008C2D-TF55 |
Type | Memory Type | DDR4 SDRAM |
Capacity | Total Memory Capacity | 8 GB |
Organization | Memory Organization | 16M x 64 |
Density | Chip Density | 8 Gb |
Voltage | Operating Voltage | 1.2V ± 0.1V |
Speed | Data Rate | 2666 MT/s |
CAS Latency | CAS Latency (CL) | 19 |
Row Address Bits | Number of Row Address Bits | 16 |
Column Address Bits | Number of Column Address Bits | 10 |
Bank Groups | Number of Bank Groups | 4 |
Banks per Group | Number of Banks per Group | 8 |
Package | Package Type | BGA |
Pin Count | Number of Pins | 78 |
Operating Temperature | Operating Temperature Range | -40°C to +85°C |
Storage Temperature | Storage Temperature Range | -55°C to +125°C |
RoHS Compliance | RoHS Compliant | Yes |
Lead-Free | Lead-Free | Yes |
Instructions for Use:
Power Supply:
- Ensure that the supply voltage is within the specified range (1.2V ± 0.1V).
- Use a stable power source to avoid voltage fluctuations.
Signal Integrity:
- Use controlled impedance traces for signal lines to minimize reflections and crosstalk.
- Terminate high-speed signals with appropriate termination resistors to maintain signal integrity.
Thermal Management:
- Ensure adequate cooling, especially if operating at higher data rates or in high ambient temperatures.
- Use heat sinks or thermal vias as necessary to dissipate heat.
Initialization:
- Follow the JEDEC DDR4 initialization sequence to properly configure the memory.
- Set the necessary mode register settings (MRs) according to the system requirements.
Clocking:
- Use a clean, low-jitter clock source for the memory controller.
- Ensure that the clock signal is distributed evenly across all memory devices.
Data and Control Signals:
- Ensure that data and control signals are synchronized with the clock.
- Use differential signaling for clock and control lines to reduce noise and improve reliability.
Testing and Validation:
- Perform thorough testing to validate the memory operation under various conditions.
- Use memory test patterns to verify the functionality and performance of the memory.
Handling:
- Handle the device with care to avoid damage from electrostatic discharge (ESD).
- Store the device in a dry, ESD-protected environment when not in use.
For more detailed information, refer to the datasheet and application notes provided by the manufacturer.
(For reference only)Inquiry - K6X1008C2D-TF55