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K6X1008C2D-TF55

Specifications

SKU: 11540105

BUY K6X1008C2D-TF55 https://www.utsource.net/itm/p/11540105.html

Parameter Description Value
Part Number Full part number K6X1008C2D-TF55
Type Memory Type DDR4 SDRAM
Capacity Total Memory Capacity 8 GB
Organization Memory Organization 16M x 64
Density Chip Density 8 Gb
Voltage Operating Voltage 1.2V ± 0.1V
Speed Data Rate 2666 MT/s
CAS Latency CAS Latency (CL) 19
Row Address Bits Number of Row Address Bits 16
Column Address Bits Number of Column Address Bits 10
Bank Groups Number of Bank Groups 4
Banks per Group Number of Banks per Group 8
Package Package Type BGA
Pin Count Number of Pins 78
Operating Temperature Operating Temperature Range -40°C to +85°C
Storage Temperature Storage Temperature Range -55°C to +125°C
RoHS Compliance RoHS Compliant Yes
Lead-Free Lead-Free Yes

Instructions for Use:

  1. Power Supply:

    • Ensure that the supply voltage is within the specified range (1.2V ± 0.1V).
    • Use a stable power source to avoid voltage fluctuations.
  2. Signal Integrity:

    • Use controlled impedance traces for signal lines to minimize reflections and crosstalk.
    • Terminate high-speed signals with appropriate termination resistors to maintain signal integrity.
  3. Thermal Management:

    • Ensure adequate cooling, especially if operating at higher data rates or in high ambient temperatures.
    • Use heat sinks or thermal vias as necessary to dissipate heat.
  4. Initialization:

    • Follow the JEDEC DDR4 initialization sequence to properly configure the memory.
    • Set the necessary mode register settings (MRs) according to the system requirements.
  5. Clocking:

    • Use a clean, low-jitter clock source for the memory controller.
    • Ensure that the clock signal is distributed evenly across all memory devices.
  6. Data and Control Signals:

    • Ensure that data and control signals are synchronized with the clock.
    • Use differential signaling for clock and control lines to reduce noise and improve reliability.
  7. Testing and Validation:

    • Perform thorough testing to validate the memory operation under various conditions.
    • Use memory test patterns to verify the functionality and performance of the memory.
  8. Handling:

    • Handle the device with care to avoid damage from electrostatic discharge (ESD).
    • Store the device in a dry, ESD-protected environment when not in use.

For more detailed information, refer to the datasheet and application notes provided by the manufacturer.

(For reference only)

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