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S29GL256P10TFI010

Specifications

SKU: 11542561

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Parameter Description Value
Device Flash Memory S29GL256P10TFI010
Manufacturer Spansion (now part of Cypress Semiconductor)
Package Type TFBGA (Thin Fine Pitch Ball Grid Array) 100-pin
Density Storage Capacity 256 Mbit (32 MB)
Voltage Range (Vcc) Supply Voltage 2.7 V to 3.6 V
Operating Temperature Industrial Temperature Range -40°C to +85°C
Data Retention Data Retention Time 20 years
Endurance Program/Erase Cycles 100,000 cycles
Access Time Read Access Time (tRAC) 70 ns (typical)
Write Cycle Time Page Program Time 2 ms (typical)
Erase Time Block Erase Time 4 ms (typical)
Data Bus Width Data Bus Width 8-bit or 16-bit
Organization Memory Organization 32M x 8 or 16M x 16
Programming Algorithm Programming Method Byte, Page, and Block Programming
Protection Features Security Features Block Lock, Software Write Protect
Power Consumption Active Read Current (Icc) 35 mA (max) at 3.6 V
Standby Current Standby Current (Icc) 10 μA (max) at 3.6 V
Deep Power-Down Mode Deep Power-Down Current (IDD5) 1 μA (max) at 3.6 V
Package Dimensions Package Size 12 mm x 12 mm x 1.0 mm
RoHS Compliance RoHS Compliant Yes

Instructions for Use

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
    • Connect the ground (GND) pin to a stable ground reference.
  2. Address and Data Lines:

    • Connect the address lines (A0-A23) to the appropriate address bus.
    • Connect the data lines (DQ0-DQ7 or DQ0-DQ15) to the data bus based on the selected bus width (8-bit or 16-bit).
  3. Control Signals:

    • Connect the chip enable (CE#), output enable (OE#), write enable (WE#), and byte lane select (BLS#) signals as required by your system design.
    • For 16-bit operation, connect the BLS# signal to control the upper and lower byte lanes.
  4. Programming and Erasing:

    • Use the provided programming algorithms for byte, page, and block programming.
    • Perform block erase operations using the specified block erase commands.
    • Ensure that the device is properly protected against accidental writes by using the block lock and software write protect features.
  5. Power Management:

    • Utilize the deep power-down mode to reduce power consumption during idle periods by asserting the deep power-down enable (DPD#) signal.
  6. Temperature Considerations:

    • Operate the device within the industrial temperature range of -40°C to +85°C to ensure reliable performance.
  7. Handling Precautions:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow the recommended soldering and reflow profiles to ensure proper mounting on the PCB.
  8. Testing and Validation:

    • Perform thorough testing and validation of the device in your application to ensure it meets all performance and reliability requirements.
(For reference only)

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