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CY7C1019CV33-15VC

Specifications

SKU: 11544381

BUY CY7C1019CV33-15VC https://www.utsource.net/itm/p/11544381.html

Parameter Description Value
Part Number Full Part Number CY7C1019CV33-15VC
Type Device Type 128K x 8-bit SRAM
Technology Memory Technology CMOS Static RAM (SRAM)
Organization Memory Organization 128K x 8 bits (16,384 x 8 bits)
Supply Voltage Operating Voltage Range 3.3V ± 0.3V
Operating Temperature Industrial Temperature Range -40°C to +85°C
Access Time Access Time (Typical) 15 ns
Data Retention Data Retention Time 20 years at 25°C
Power Consumption Active Power Consumption 125 mW (Typical)
Standby Power Consumption Standby Power Consumption 10 μW (Typical)
Package Package Type 44-pin TQFP (Thin Quad Flat Pack)
Pin Configuration Pin Count 44 pins
Write Cycle Time Write Cycle Time (Typical) 15 ns
Cycle Time Minimum Cycle Time 15 ns
Input/Output Number of I/O Pins 8 data pins, 14 address pins, 5 control pins
Slew Rate Control Slew Rate Control Yes
Drive Strength Output Drive Strength 24 mA (Typical)
Input Clamping Diodes Input Clamping Diodes Yes
ESD Protection ESD Protection HBM: 2000V, MM: 200V
RoHS Compliance RoHS Compliant Yes

Instructions for Use

  1. Power Supply:

    • Ensure the supply voltage is within the specified range of 3.3V ± 0.3V.
    • Use decoupling capacitors (0.1 μF and 10 μF) close to the power pins to reduce noise and ensure stable operation.
  2. Address and Data Lines:

    • Connect the address lines (A0-A13) to the appropriate address bus.
    • Connect the data lines (D0-D7) to the data bus.
    • Ensure that the address and data lines are properly terminated to avoid signal reflections.
  3. Control Signals:

    • Chip Select (CS#): Low to enable the device.
    • Write Enable (WE#): Low to write data to the memory.
    • Output Enable (OE#): Low to read data from the memory.
    • Byte Enable (UB#, LB#): Used to select the upper or lower byte for write operations.
    • Clock Enable (CE2#): Optional, used for additional chip enable control.
  4. Timing:

    • Ensure that all timing parameters, such as access time and cycle time, are met to avoid data corruption.
    • Refer to the timing diagrams in the datasheet for detailed timing requirements.
  5. Handling:

    • Handle the device with care to avoid damage from electrostatic discharge (ESD).
    • Use proper ESD protection equipment when handling the device.
  6. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Follow the recommended storage conditions provided in the datasheet.
  7. Testing:

    • Perform initial testing under controlled conditions to verify proper operation.
    • Use a logic analyzer or similar tool to monitor signals and ensure correct timing and levels.
  8. Layout:

    • Follow good PCB layout practices to minimize noise and crosstalk.
    • Keep signal traces short and direct, especially for high-speed signals.

For more detailed information, refer to the official datasheet and application notes provided by Cypress Semiconductor.

(For reference only)

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