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Specifications
SKU: 11546066
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 30 | V | Maximum voltage between collector and emitter with base open |
| Emitter-Collector Voltage | VEBO | - | - | 5 | V | Maximum voltage between emitter and base with collector open |
| Base-Emitter Voltage | VBE | - | - | 6.5 | V | Maximum voltage between base and emitter with collector open |
| Collector Current | IC | - | - | 200 | mA | Maximum continuous collector current |
| Power Dissipation | PT | - | - | 625 | mW | Maximum power dissipation at TA = 25°C |
| Operating Temperature | TA | -40 | - | 150 | °C | Operating ambient temperature range |
| Storage Temperature | TSTG | -65 | - | 150 | °C | Storage temperature range |
Instructions for Use:
Handling Precautions:
- Handle the MMBFJ177LT1G with care to avoid static damage.
- Use appropriate ESD (Electrostatic Discharge) protection equipment.
Mounting:
- Ensure proper alignment of the component during soldering.
- Do not exceed the maximum soldering temperature of 260°C for more than 10 seconds.
Biasing:
- Apply the correct biasing voltages to ensure proper operation.
- Refer to the datasheet for detailed biasing conditions.
Thermal Management:
- Ensure adequate heat sinking if operating near the maximum power dissipation.
- Monitor the junction temperature to prevent overheating.
Testing:
- Use a multimeter or an appropriate testing device to verify the functionality of the transistor.
- Follow the recommended test conditions provided in the datasheet.
Storage:
- Store the MMBFJ177LT1G in a dry, cool place to prevent moisture damage.
- Avoid exposure to extreme temperatures and humidity.
Compliance:
- Ensure that the application complies with all relevant safety and regulatory standards.
Inquiry - MMBFJ177LT1G
