Name: STF17NF25
Availability: InStock

STF17NF25

Category: Transistors, Bipolar transistors

Specifications

SKU: 11546391

BUY STF17NF25 https://www.utsource.net/itm/p/11546391.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	V_DS	-	-	250	V	-
Gate-Source Voltage	V_GS	-15	-	15	V	-
Continuous Drain Current	I_D	-	-	17	A	T_C = 25°C
Continuous Drain Current	I_D	-	-	13.6	A	T_C = 100°C
Pulse Drain Current	I_D(p)	-	-	40	A	t_p = 10 μs, T_C = 25°C
Gate Charge	Q_G	-	12	18	nC	V_GS = 15V
Input Capacitance	C_iss	-	1150	1900	pF	V_DS = 15V, f = 1 MHz
Output Capacitance	C_oss	-	260	400	pF	V_DS = 15V, f = 1 MHz
Reverse Transfer Capacitance	C_rss	-	150	240	pF	V_DS = 15V, f = 1 MHz
On-State Resistance	R_DS(on)	-	0.065	0.085	Ω	V_GS = 10V, I_D = 17A, T_C = 25°C
On-State Resistance	R_DS(on)	-	0.075	0.095	Ω	V_GS = 10V, I_D = 13.6A, T_C = 100°C
Total Power Dissipation	P_TOT	-	-	200	W	T_C = 25°C
Junction Temperature	T_J	-	-	150	°C	-
Storage Temperature	T_STG	-55	-	150	°C	-

Mounting and Handling:
- Ensure proper heat sinking to maintain the junction temperature within safe limits.
- Handle with care to avoid damage to the pins and body.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use appropriate gate drive circuits to ensure reliable switching.
Thermal Management:
- Ensure adequate cooling to prevent overheating, especially during high current or high-frequency operation.
- Monitor the junction temperature to avoid exceeding the maximum rating.
Gate Drive:
- Apply the correct gate-source voltage (V_GS) to turn the MOSFET on and off.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Overvoltage Protection:
- Implement overvoltage protection to safeguard against voltage spikes that could exceed the maximum drain-source voltage (V_DS).
Storage and Transportation:
- Store in a dry, cool place away from direct sunlight and sources of heat.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage.
Testing:
- Perform initial testing under controlled conditions to verify proper operation.
- Regularly inspect for signs of wear or damage.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)

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