Specifications
SKU: 11546423
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 600 | - | V |
Gate-Source Voltage | VGS | -15 | - | 20 | V |
Continuous Drain Current | ID | - | 60 | - | A |
Pulse Drain Current | IDpeak | - | 180 | - | A |
Power Dissipation | PTOT | - | - | 375 | W |
Junction Temperature | TJ | -55 | - | 175 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Thermal Resistance (J-C) | RθJC | - | 0.5 | - | °C/W |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle the device with care to avoid damage to the pins and the silicon die.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short, low-inductance leads to minimize parasitic inductance effects.
Gate Drive:
- Apply a gate-source voltage (VGS) within the specified range to turn the MOSFET on or off.
- Ensure the gate driver can provide sufficient current to charge and discharge the gate capacitance quickly.
Thermal Management:
- Monitor the junction temperature to prevent overheating.
- Use thermal paste between the MOSFET and the heatsink for better thermal conductivity.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive current.
- Consider using a current limiting circuit or a fuse in series with the MOSFET.
Surge Currents:
- Be aware of the pulse drain current rating and ensure that surge currents do not exceed this value for extended periods.
Storage and Operating Conditions:
- Store the device in a dry, cool environment to prevent moisture damage.
- Operate the device within the specified storage and operating temperature ranges to ensure reliability.
Testing and Debugging:
- Use a multimeter to check for continuity and resistance between terminals before applying power.
- Perform functional tests at various operating points to verify correct operation.
Inquiry - FGH60N60SFD 60N60 60A600V