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ACNW3130-500E

Specifications

SKU: 11548164

BUY ACNW3130-500E https://www.utsource.net/itm/p/11548164.html

Parameter Description Value
Part Number ACNW3130-500E
Type Power MOSFET
Package TO-220
Polarity N-Channel
Drain-Source Voltage (Vds) Maximum Drain-Source Voltage 500 V
Gate-Source Voltage (Vgs) Maximum Gate-Source Voltage ±20 V
Continuous Drain Current (Id) Continuous Drain Current at 25°C Case Temperature 13 A
Pulse Drain Current (Ibm) Pulse Drain Current (10 ms, 1% Duty Cycle) 60 A
Rds(on) @ Vgs = 10V On-State Resistance 1.8 Ω
Total Power Dissipation (Ptot) Total Power Dissipation at 25°C Ambient Temperature 150 W
Junction Temperature (Tj) Maximum Junction Temperature 175°C
Storage Temperature (Tstg) Operating Temperature Range -55°C to 150°C
Thermal Resistance (Rth(j-c)) Thermal Resistance, Junction to Case 1.4 K/W

Instructions for Use

  1. Handling Precautions:

    • Handle the device with care to avoid damage to the leads or the body.
    • Use appropriate ESD protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat.
    • Apply a suitable thermal compound between the device and the heatsink to improve thermal conductivity.
    • Torque the mounting screws to the recommended value to ensure proper contact without over-tightening.
  3. Electrical Connections:

    • Connect the drain, source, and gate terminals correctly to avoid short circuits.
    • Use short, heavy-gauge wires for low inductance connections.
    • Ensure that the gate drive circuitry provides sufficient voltage and current to turn the MOSFET on and off quickly.
  4. Thermal Management:

    • Monitor the junction temperature to ensure it does not exceed the maximum rating.
    • Use a heatsink with adequate surface area and cooling capacity to dissipate heat effectively.
    • Consider forced air cooling if natural convection is insufficient.
  5. Operating Conditions:

    • Do not exceed the maximum ratings for voltage, current, and power dissipation.
    • Ensure that the device operates within the specified temperature range.
    • Avoid operating the device in conditions that could cause thermal runaway.
  6. Testing:

    • Test the device under controlled conditions to verify its performance and reliability.
    • Use a suitable test setup to measure parameters such as Rds(on), Vds, and Id.
  7. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the device in its original packaging until ready for use to protect it from moisture and physical damage.

By following these guidelines, you can ensure optimal performance and longevity of the ACNW3130-500E MOSFET.

(For reference only)

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