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2SA1302-O,2SA1302

Specifications

SKU: 11552812

BUY 2SA1302-O,2SA1302 https://www.utsource.net/itm/p/11552812.html

Parameter Symbol 2SA1302-O / 2SA1302
Collector-Emitter Voltage (VCEO) VCEO 80 V
Emitter-Collector Voltage (VECO) VECO 80 V
Base-Emitter Voltage (VBE) VBE 7 V
Collector Current (IC) IC 15 A
Base Current (IB) IB 1.5 A
Power Dissipation (Ptot) Ptot 125 W
Storage Temperature Range (Tstg) Tstg -55°C to +150°C
Operating Junction Temperature (Tj) Tj -55°C to +150°C
Transition Frequency (ft) ft 4 MHz
DC Current Gain (hFE) hFE 20 to 100

Instructions for Use:

  1. Mounting:

    • Ensure proper heat dissipation by mounting the transistor on a heatsink if operating near maximum power dissipation.
    • Use thermal compound between the transistor and heatsink for better heat transfer.
  2. Biasing:

    • Bias the base-emitter junction with a voltage within the specified range to avoid damage.
    • Use a current-limiting resistor in series with the base to prevent excessive base current.
  3. Protection:

    • Include a flyback diode across inductive loads to protect against voltage spikes.
    • Use appropriate decoupling capacitors to stabilize the circuit and filter noise.
  4. Storage:

    • Store the transistors in a dry, cool place away from direct sunlight and sources of heat.
    • Handle with care to avoid mechanical stress or damage to the leads.
  5. Testing:

    • Test the transistor using a multimeter or a dedicated transistor tester to ensure it is functioning correctly before installation.
    • Verify all connections and solder joints are secure and free from shorts or cold solder joints.
  6. Safety:

    • Always disconnect power before making any changes to the circuit.
    • Use appropriate personal protective equipment (PPE) when handling high-voltage circuits.
(For reference only)

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