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FGA25N120 FGA25N120AND FGA25N120ANDTU CHINA ORIGINAL

Specifications

SKU: 11553985

BUY FGA25N120 FGA25N120AND FGA25N120ANDTU CHINA ORIGINAL https://www.utsource.net/itm/p/11553985.html

Parameter FGA25N120 FGA25N120AND FGA25N120ANDTU
Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
VDS (Max) (V) 1200 1200 1200
VGS (Max) (V) ±20 ±20 ±20
ID (Continuous) (A) 25 25 25
RDS(on) (Typ) (mΩ) 350 350 350
Power Dissipation (W) 240 240 240
Junction Temperature (°C) -55 to 150 -55 to 150 -55 to 150
Package TO-247 TO-247 TO-247
Lead Free Yes Yes Yes
RoHS Compliant Yes Yes Yes

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid static damage.
    • Use proper ESD protection equipment when handling the device.
  2. Mounting:

    • Ensure good thermal contact with a heatsink if operating at high power levels.
    • Use a suitable thermal compound between the device and the heatsink to improve heat dissipation.
  3. Electrical Connections:

    • Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
    • Ensure that the VGS voltage does not exceed the maximum rating of ±20V.
    • Use appropriate gate resistors to control switching speed and reduce electromagnetic interference (EMI).
  4. Operating Conditions:

    • Operate within the specified temperature range (-55°C to 150°C).
    • Ensure that the continuous drain current (ID) does not exceed 25A.
    • Monitor the power dissipation to stay within the 240W limit.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in original packaging until ready for use to prevent damage.
  6. Testing:

    • Test the device using a suitable MOSFET tester or multimeter to ensure it is functioning correctly before installation.
  7. Disposal:

    • Dispose of the device according to local regulations for electronic waste.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)

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