Specifications
SKU: 11554505
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | 150 | V |
Gate-Source Voltage | VGS | -15 | - | 15 | V |
Continuous Drain Current | ID | - | - | 28 | A |
Pulse Drain Current (tp = 10 ms, Duty Cycle = 1%) | ID(pulse) | - | - | 100 | A |
Gate Charge | QG | - | 74 | - | nC |
Input Capacitance | Ciss | - | 1600 | - | pF |
Output Capacitance | Coss | - | 280 | - | pF |
Total Power Dissipation (TC = 25°C) | PTOT | - | - | 180 | W |
Junction Temperature | TJ | - | - | 175 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid damage.
- Use appropriate ESD protection measures to prevent static damage.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary.
- Follow the recommended PCB layout guidelines for optimal performance.
Biasing:
- Apply the gate-source voltage (VGS) within the specified limits to avoid damage.
- Ensure the drain-source voltage (VDS) does not exceed the maximum rating.
Current Limiting:
- Do not exceed the continuous drain current (ID) or pulse drain current (ID(pulse)) ratings.
- Use current limiting resistors if required to protect the device.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it stays within safe operating limits.
- Use thermal paste and a heatsink to improve heat dissipation.
Storage:
- Store the device in a dry, cool place within the storage temperature range (TSTG).
Testing:
- Perform initial testing at low power levels to verify correct operation before applying full load.
- Use a multimeter or oscilloscope to check the device parameters during operation.
Troubleshooting:
- If the device fails, check for overvoltage, overcurrent, or overheating conditions.
- Replace any damaged components and retest the circuit.
Compliance:
- Ensure the device is used in compliance with all relevant safety and regulatory standards.
Inquiry - FQA28N15 28N15 28A 150V MOS TO-3P