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IXFH32N50Q

Specifications

SKU: 11555639

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Description: The IXFH32N50Q is a high voltage, high speed, N-channel MOSFET from IXYS. Features: Maximum Drain Source Voltage of 500V Maximum Gate Source Voltage of ±20V Maximum Continuous Drain Current of 32A Maximum Drain Source On-State Resistance of 0.0075Ω Maximum Operating Junction Temperature of 175°C Maximum Power Dissipation of 545W Applications: Motor Control Switching Power Supplies Uninterruptible Power Supplies Automotive Applications High Frequency Inverters (For reference only)

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