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Specifications
SKU: 11556371
| Parameter | Description | Value |
|---|---|---|
| Product Name | NAND Flash Memory | THGBMDG5D1LBAIL |
| Memory Density | Total Memory | 64 Gb (8 GB) |
| Organization | Number of Banks x Pages per Bank x Words per Page | 2048 x 128 x 2048 |
| Interface | NAND Interface Type | Toggle Mode 2.0 |
| Supply Voltage | VCC (Core Supply) | 1.8V ± 0.1V |
| I/O Voltage | VCCQ (I/O Supply) | 1.8V ± 0.1V |
| Operating Temperature Range | Industrial Temperature Range | -40°C to +85°C |
| Data Retention | Minimum Data Retention Time | 10 years |
| Endurance | Program/Erase Cycles | 3,000 cycles |
| Access Time | tR (Read Access Time) | 50 ns |
| Write Time | tPROG (Program Time for 1 Page) | 400 μs |
| Erase Time | tBERS (Block Erase Time) | 2 ms |
| Package | Package Type | BGA |
| Package Size | Package Dimensions | 16 mm x 12 mm x 1.2 mm |
| Pin Count | Number of Pins | 80 |
| Standards Compliance | JEDEC Standards | JESD218A, JESD84-B47 |
Instructions for Use
Power Supply:
- Ensure that the core supply (VCC) and I/O supply (VCCQ) are set to 1.8V ± 0.1V.
- Power up the device before applying any signals.
Signal Integrity:
- Use proper decoupling capacitors near the power pins to ensure stable operation.
- Ensure all signal lines are properly terminated to prevent reflections and signal integrity issues.
Initialization:
- After power-up, the device will be in the RESET state. Send the appropriate command sequence to initialize the device.
- Refer to the device datasheet for specific initialization sequences.
Command Sequence:
- Use the correct command codes for read, write, and erase operations.
- For example, the read command is typically 0x00, the program command is 0x80, and the block erase command is 0x60.
Timing Parameters:
- Adhere to the specified timing parameters such as access time, write time, and erase time to ensure reliable operation.
- Use the provided timing diagrams in the datasheet to understand the timing relationships between commands and data transfers.
Error Handling:
- Monitor the status register to check for errors during operations.
- Implement error correction mechanisms if necessary, especially for critical applications.
Environmental Considerations:
- Operate the device within the specified temperature range (-40°C to +85°C) to avoid damage or performance degradation.
- Store the device in a dry, cool environment when not in use.
Handling Precautions:
- Handle the device with care to avoid mechanical damage.
- Use ESD protection measures to prevent electrostatic discharge damage.
Data Management:
- Implement wear leveling algorithms to distribute writes evenly across the memory to maximize endurance.
- Regularly back up important data to prevent loss due to data retention limits.
Compliance:
- Ensure that the device is used in compliance with all relevant standards and regulations.
- Refer to the datasheet for detailed compliance information and guidelines.
For more detailed information, refer to the specific datasheet and application notes provided by the manufacturer.
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