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2SC3303-Y

Specifications

SKU: 11565285

BUY 2SC3303-Y https://www.utsource.net/itm/p/11565285.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCE - - 45 V
Emitter-Base Voltage VEB - - 6 V (Reverse)
Collector Current IC - 150 - mA
Base Current IB - 15 - mA
Power Dissipation PT - - 625 mW TA = 25°C
Storage Temperature TSTG -55 - 150 °C
Operating Temperature TA -55 - 150 °C
DC Current Gain hFE 100 300 800 - IC = 150mA, VCE = 10V
Transition Frequency fT - 200 - MHz

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings specified in the table to prevent damage to the transistor.
    • Use proper anti-static precautions when handling the device to avoid electrostatic discharge (ESD) damage.
  2. Mounting:

    • Ensure the device is mounted on a suitable heat sink if operating near its maximum power dissipation.
    • Follow recommended soldering profiles to avoid thermal shock during assembly.
  3. Biasing:

    • The base-emitter junction should be forward-biased for normal operation.
    • Use appropriate biasing circuits to ensure stable operation over temperature and supply voltage variations.
  4. Testing:

    • When testing the device, use a current-limited power supply to prevent accidental overcurrent conditions.
    • Measure the collector-emitter voltage (VCE) and collector current (IC) to verify proper operation.
  5. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the device in its original packaging until ready for use to protect against static and physical damage.
(For reference only)

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