Specifications
SKU: 11565285
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 45 | V | |
Emitter-Base Voltage | VEB | - | - | 6 | V | (Reverse) |
Collector Current | IC | - | 150 | - | mA | |
Base Current | IB | - | 15 | - | mA | |
Power Dissipation | PT | - | - | 625 | mW | TA = 25°C |
Storage Temperature | TSTG | -55 | - | 150 | °C | |
Operating Temperature | TA | -55 | - | 150 | °C | |
DC Current Gain | hFE | 100 | 300 | 800 | - | IC = 150mA, VCE = 10V |
Transition Frequency | fT | - | 200 | - | MHz |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings specified in the table to prevent damage to the transistor.
- Use proper anti-static precautions when handling the device to avoid electrostatic discharge (ESD) damage.
Mounting:
- Ensure the device is mounted on a suitable heat sink if operating near its maximum power dissipation.
- Follow recommended soldering profiles to avoid thermal shock during assembly.
Biasing:
- The base-emitter junction should be forward-biased for normal operation.
- Use appropriate biasing circuits to ensure stable operation over temperature and supply voltage variations.
Testing:
- When testing the device, use a current-limited power supply to prevent accidental overcurrent conditions.
- Measure the collector-emitter voltage (VCE) and collector current (IC) to verify proper operation.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect against static and physical damage.
Inquiry - 2SC3303-Y