Specifications
SKU: 11565311
Parameter | Description | Value | Unit |
---|---|---|---|
Part Number | Device Identifier | UT108N03L | - |
Type | Component Type | MOSFET | - |
VDS | Drain-Source Voltage | 30 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Continuous Drain Current | 8.0 | A |
PTOT | Total Power Dissipation | 65 | W |
RDS(on) | On-State Resistance at VGS=10V | 4.5 | mΩ |
QG | Gate Charge | 79 | nC |
fSW | Switching Frequency | 500 | kHz |
TJ | Junction Temperature Range | -55 to 150 | °C |
Package | Housing | TO-220 | - |
Storage Temperature | Operating Range for Storage | -55 to 150 | °C |
Instructions for Use:
Handling and Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Handle the device with care to avoid mechanical stress on the leads and package.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary, especially when operating at high power levels.
- Follow the recommended soldering profile to avoid thermal shock and ensure reliable connections.
Electrical Connections:
- Connect the gate, drain, and source terminals according to the circuit diagram.
- Use appropriate gate drive circuits to ensure the MOSFET operates within its safe operating area (SOA).
Operating Conditions:
- Do not exceed the maximum ratings for VDS, VGS, ID, and PTOT.
- Monitor the junction temperature to prevent overheating and potential failure.
Testing:
- Test the device under controlled conditions to verify its performance and reliability.
- Use a suitable test setup that can accurately measure the parameters such as RDS(on) and QG.
Safety:
- Always follow safety guidelines when handling high-voltage and high-power components.
- Use protective equipment such as gloves and goggles when necessary.
For more detailed information, refer to the datasheet provided by the manufacturer.
(For reference only)Inquiry - UT108N03L