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UT108N03L

Specifications

SKU: 11565311

BUY UT108N03L https://www.utsource.net/itm/p/11565311.html

Parameter Description Value Unit
Part Number Device Identifier UT108N03L -
Type Component Type MOSFET -
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current 8.0 A
PTOT Total Power Dissipation 65 W
RDS(on) On-State Resistance at VGS=10V 4.5
QG Gate Charge 79 nC
fSW Switching Frequency 500 kHz
TJ Junction Temperature Range -55 to 150 °C
Package Housing TO-220 -
Storage Temperature Operating Range for Storage -55 to 150 °C

Instructions for Use:

  1. Handling and Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Handle the device with care to avoid mechanical stress on the leads and package.
  2. Mounting:

    • Ensure proper thermal management by using a heatsink if necessary, especially when operating at high power levels.
    • Follow the recommended soldering profile to avoid thermal shock and ensure reliable connections.
  3. Electrical Connections:

    • Connect the gate, drain, and source terminals according to the circuit diagram.
    • Use appropriate gate drive circuits to ensure the MOSFET operates within its safe operating area (SOA).
  4. Operating Conditions:

    • Do not exceed the maximum ratings for VDS, VGS, ID, and PTOT.
    • Monitor the junction temperature to prevent overheating and potential failure.
  5. Testing:

    • Test the device under controlled conditions to verify its performance and reliability.
    • Use a suitable test setup that can accurately measure the parameters such as RDS(on) and QG.
  6. Safety:

    • Always follow safety guidelines when handling high-voltage and high-power components.
    • Use protective equipment such as gloves and goggles when necessary.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)

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